Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Byoung-Kye Kim ◽  
I. J. Lee ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Tunneling Effect ◽  
Temperature Dependent ◽  
Gan Nanowires ◽  
Single Electron Tunneling ◽  
Heavily Doped

NONLINEAR DYNAMICS OF DRIVEN SINGLE-ELECTRON TUNNELING JUNCTIONS

2000 ◽  
Vol 10 (05) ◽  
pp. 1091-1113 ◽  
Author(s):  
TAO YANG ◽  
LEON O. CHUA
Keyword(s):  
Nonlinear Dynamics ◽  
Periodic Solutions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Tunneling Effect ◽  
Almost Periodic ◽  
Two Phase ◽  
Single Electron Tunneling ◽  
Tunneling Junctions ◽  
Theoretical Results

In this paper we investigate the nonlinear dynamics of circuits made of single-electron tunneling junctions (SETJ) driven by a sinusoidal pump and biased by a DC voltage source. The mathematical model of an isolated SETJ circuit is a first-order nonautonomous impulsive differential equation. The tunneling effect of each SETJ can be realistically modeled by the impulsive effect of the junction voltage, which we choose to be the state variable of our circuit model. Based on this model we present theoretical results on the stability of the periodic and almost periodic solutions of driven SETJs. Our theoretical results show there are two phase states in each isolated SETJ circuit, which corresponds to two phase-shifted periodic solutions of our model. We present theoretical and numerical results of return maps of an isolated SETJ circuit. Our results also show that if the tunneling events are equipotentially almost periodic then the attractors generated by two-coupled SETJs will be confined to the vicinity of some periodic orbits. This result provides a foundation for implementing robust logic operations in nanoelectronics.

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

2019 ◽  
Vol 11 (12) ◽  
pp. 1261-1265
Author(s):  
Seyed Norollah Hedayat ◽  
Seyedeh Sahar Hedayat
Keyword(s):  
Electron Tunneling ◽  
Structural Parameters ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Quantum Current ◽  
New Type

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

Size-dependent single electron tunneling effect in Au nanoparticles

2007 ◽  
Vol 601 (18) ◽  
pp. 3907-3911 ◽  
Author(s):  
R. Negishi ◽  
T. Hasegawa ◽  
H. Tanaka ◽  
K. Terabe ◽  
H. Ozawa ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Electron Tunneling ◽  
Single Electron ◽  
Tunneling Effect ◽  
Size Dependent ◽  
Single Electron Tunneling

Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4161-4165 ◽  
Author(s):  
Nobuyuki Yoshikawa ◽  
Hideki Kimijima ◽  
Norihiro Miura ◽  
Masanori Sugahara
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Tunneling

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

2001 ◽  
Vol 90 (7) ◽  
pp. 3551-3557 ◽  
Author(s):  
Ken Uchida ◽  
Junji Koga ◽  
Ryuji Ohba ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
Electron Tunneling ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Insulator Film ◽  
Single Electron Tunneling
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