High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

2000 ◽  
Vol 76 (19) ◽  
pp. 2680-2682 ◽  
Author(s):  
F. Y. Huang ◽  
M. A. Chu ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
G. D. U’Ren ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Quality ◽  
Sige Alloy ◽  
Insulator Substrate

High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding

2003 ◽  
Vol 32 (11) ◽  
pp. 1339-1343 ◽  
Author(s):  
D. V. Singh ◽  
L. Shi ◽  
K. W. Guarini ◽  
P. M. Mooney ◽  
S. J. Koester ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Wafer Bonding ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
High Quality ◽  
Crystalline Layer ◽  
Insulator Substrate

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

SiGe-on-insulator substrate using SiGe alloy grown Si(001)

1999 ◽  
Vol 75 (7) ◽  
pp. 983-985 ◽  
Author(s):  
Yukari Ishikawa ◽  
N. Shibata ◽  
S. Fukatsu
Keyword(s):  
Sige Alloy ◽  
Insulator Substrate

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate

Characterization of a Non-Interdigitated Comb Drive

2018 ◽  
Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  
Keyword(s):  
Quality Factor ◽  
Fundamental Frequency ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
High Quality ◽  
Sensor Applications ◽  
Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

650 GHz SIS mixer fabricated on silicon‐on‐insulator substrate

2013 ◽  
Vol 49 (20) ◽  
pp. 1273-1275 ◽  
Author(s):  
B.‐K. Tan ◽  
G. Yassin ◽  
P. Grimes ◽  
K. Jacobs
Keyword(s):  
Silicon On Insulator ◽  
Sis Mixer ◽  
Insulator Substrate
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