SiGe-on-insulator substrate using SiGe alloy grown Si(001)

1999 ◽  
Vol 75 (7) ◽  
pp. 983-985 ◽  
Author(s):  
Yukari Ishikawa ◽  
N. Shibata ◽  
S. Fukatsu
Keyword(s):  
Sige Alloy ◽  
Insulator Substrate

High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

2000 ◽  
Vol 76 (19) ◽  
pp. 2680-2682 ◽  
Author(s):  
F. Y. Huang ◽  
M. A. Chu ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
G. D. U’Ren ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Quality ◽  
Sige Alloy ◽  
Insulator Substrate

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate

8-ch, 160-nm-Wavelength-Range Membrane Laser Array Using Selective Epitaxy on InP-on-Insulator Substrate

2021 ◽  
Author(s):  
Takuro Fujii ◽  
Tomonari Sato ◽  
Nikolaos-Panteleimon Diamantopoulos ◽  
Koji Takeda ◽  
Hidetaka Nishi ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Laser Array ◽  
Selective Epitaxy ◽  
Insulator Substrate

Thermal Conductivity of Si/SiGe Superlattices

2001 ◽  
Author(s):  
Scott T. Huxtable ◽  
Alexis R. Abramson ◽  
Arun Majumdar ◽  
Chang-Lin Tien ◽  
Chris LaBounty ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Measurement Technique ◽  
Unit Length ◽  
Temperature Range ◽  
Sige Alloy ◽  
The Cross ◽  
Superlattice Structures

Abstract The cross-plane and in-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattice structures with periods from 45 Å to 300 Å are experimentally investigated using the 3-ω measurement technique. The experiment is conducted over a temperature range from 70 to 340 K. Results indicate that the cross-plane thermal conductivity decreases with decreasing period thickness (i.e. increasing number of interfaces per unit length). The superlattice with the shortest period exhibits a cross-plane thermal conductivity similar to that of a SiGe alloy. The in-plane thermal conductivity follows a similar decreasing trend with period thickness for the three larger period superlattices, but jumps to higher values for the shortest period superlattice. Additionally, the in-plane conductivity can be 3–4 times higher than the cross-plane value.

scholarly journals Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD

2006 ◽  
Vol 36 (2a) ◽  
pp. 466-469 ◽  
Author(s):  
R. C. Teixeira ◽  
I. Doi ◽  
J. A. Diniz ◽  
J. W. Swart ◽  
M. B. P. Zakia
Keyword(s):  
Morphological Study ◽  
Sige Alloy
Sign in / Sign up

Export Citation Format

Share Document