P-type polycrystalline diamond layers by rapid thermal diffusion of boron

2000 ◽  
Vol 76 (7) ◽  
pp. 849-851 ◽  
Author(s):  
Oleh B. Krutko ◽  
Peter B. Kosel ◽  
R. L. C. Wu ◽  
S. J. Fries-Carr ◽  
S. Heidger ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Polycrystalline Diamond ◽  
Rapid Thermal Diffusion ◽  
P Type

Boron Doping using Proximity Rapid Thermal Diffusion from Spin-on-Dopants

1994 ◽  
Vol 342 ◽  
Author(s):  
M. Rastogi ◽  
W. Zagozdzon-Wosik ◽  
F. Romero-Borja ◽  
J. M. Heddleson ◽  
R. Beavers ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Process Variables ◽  
Dopant Incorporation ◽  
Boron Doped ◽  
Doping Technique ◽  
Rapid Thermal Diffusion ◽  
P Type ◽  
Temperature Time ◽  
Secondary Ion ◽  
Dopant Source

ABSTRACTProximity rapid thermal diffusion (RTD) has been investigated as a doping technique for p-type boron doped junctions. The efficiency of RTD has been studied as a function of process variables (temperature, time, and ambient) and evaluated based on sheet resistance measurements, secondary ion mass spectroscopy (SIMS), spreading resistance (SR), and Fourier transmission infrared absorption (FTIR) in a spin-on-dopant source (SOD). The doping efficiency in source wafers is controlled by different mechanism than in processed wafers. Strong influence of dopant incorporation in the processed wafers on oxygen content in the diffusion ambient is observed especially at low diffusion temperatures.

The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

2004 ◽  
Vol 815 ◽  
Author(s):  
Ying Gao ◽  
Zehong Zhang ◽  
Robert Bondokov ◽  
Stanislav Soloviev ◽  
Tangali Sudarshan
Keyword(s):  
Thermal Diffusion ◽  
Basal Plane ◽  
Doping Concentration ◽  
Structural Defects ◽  
Etch Pits ◽  
Conductivity Type ◽  
Isotropic Etching ◽  
Electrochemical Processes ◽  
P Type ◽  
Koh Etching

AbstractMolten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

2004 ◽  
Vol 40 (1) ◽  
pp. 83 ◽  
Author(s):  
L.-E. Wernersson ◽  
S. Kabeer ◽  
V. Zela ◽  
E. Lind ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Tunnel Diodes ◽  
Cvd Growth ◽  
Rapid Thermal Diffusion

Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices

2000 ◽  
Vol 21 (6) ◽  
pp. 274-276 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
P. De Schepper ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Thermal Diffusion ◽  
Single Step ◽  
Photovoltaic Devices ◽  
Rapid Thermal Diffusion ◽  
Selective Emitters

Optical effects during rapid thermal diffusion

1998 ◽  
Vol 27 (12) ◽  
pp. 1315-1322 ◽  
Author(s):  
S. Noël ◽  
L. Ventura ◽  
A. Slaoui ◽  
J. C. Muller ◽  
B. Groh ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Optical Effects ◽  
Rapid Thermal Diffusion
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