Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films

1999 ◽  
Vol 75 (26) ◽  
pp. 4183-4185 ◽  
Author(s):  
V. Nagarajan ◽  
C. S. Ganpule ◽  
B. Nagaraj ◽  
S. Aggarwal ◽  
S. P. Alpay ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Behavior ◽  
Mechanical Constraint

Mechanical constraint effect on the crystallinity and the ferroelectric properties of SrBi2Ta2O9 thin films

2008 ◽  
Vol 62 (12-13) ◽  
pp. 1747-1750 ◽  
Author(s):  
Fan-Yi Hsu ◽  
Ching-Chich Leu ◽  
Cho-Jen Tsai ◽  
Chen-Ti Hu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Constraint Effect ◽  
Mechanical Constraint

Characterization of local piezoelectric behavior of ferroelectric GeTe and Ge2Sb2Te5 thin films

2012 ◽  
Vol 112 (5) ◽  
pp. 052018 ◽  
Author(s):  
J. J. Gervacio-Arciniega ◽  
E. Prokhorov ◽  
F. J. Espinoza-Beltrán ◽  
G. Trapaga
Keyword(s):  
Thin Films ◽  
Piezoelectric Behavior

Ferroelectric and piezoelectric behavior of (111)-oriented Pb(ZrxTi1−x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

2014 ◽  
Vol 25 (4) ◽  
pp. 1696-1702 ◽  
Author(s):  
M. Khodaei ◽  
Daehee Seol ◽  
S. A. Seyyed Ebrahimi ◽  
Yong Jun Park ◽  
Hosung Seo ◽  
...  
Keyword(s):  
Thin Films ◽  
Cobalt Ferrite ◽  
Si Substrate ◽  
Piezoelectric Behavior

Electrostrictive and Piezoelectric Behavior of PMN-PT Thin Films

2007 ◽  
Vol 351 (1) ◽  
pp. 15-24 ◽  
Author(s):  
M. Detalle ◽  
R. Herdier ◽  
G. S. Wang ◽  
D. Remiens ◽  
P. Roussel ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Behavior

scholarly journals Piezoelectric behavior of SrRuO3 buffered lanthanum modified bismuth ferrite thin films grown by chemical method

2008 ◽  
Vol 93 (14) ◽  
pp. 142902 ◽  
Author(s):  
A. Z. Simões ◽  
A. H. M. Gonzalez ◽  
E. C. Aguiar ◽  
C. S. Riccardi ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Method ◽  
Bismuth Ferrite ◽  
Ferrite Thin Films ◽  
Piezoelectric Behavior

Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films

2021 ◽  
Vol 118 (1) ◽  
pp. 012904
Author(s):  
S. Kirbach ◽  
M. Lederer ◽  
S. Eßlinger ◽  
C. Mart ◽  
M. Czernohorsky ◽  
...  
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Piezoelectric Behavior

scholarly journals Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

2021 ◽  
Vol 119 (20) ◽  
pp. 202903
Author(s):  
A. Brewer ◽  
S. Lindemann ◽  
B. Wang ◽  
W. Maeng ◽  
J. Frederick ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Behavior

Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films

2000 ◽  
Vol 77 (3) ◽  
pp. 438-440 ◽  
Author(s):  
V. Nagarajan ◽  
S. P. Alpay ◽  
C. S. Ganpule ◽  
B. K. Nagaraj ◽  
S. Aggarwal ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Lead Magnesium Niobate ◽  
Magnesium Niobate ◽  
Lead Magnesium ◽  
Piezoelectric Behavior

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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