Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films

2021 ◽  
Vol 118 (1) ◽  
pp. 012904
Author(s):  
S. Kirbach ◽  
M. Lederer ◽  
S. Eßlinger ◽  
C. Mart ◽  
M. Czernohorsky ◽  
...  
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Piezoelectric Behavior

Effect of Zn doping concentration on optical band gap of PbS thin films

2019 ◽  
Vol 792 ◽  
pp. 1000-1007 ◽  
Author(s):  
Mengting Liu ◽  
Qiuqiang Zhan ◽  
Wei Li ◽  
Rui Li ◽  
Qinyu He ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Zn Doping

Tuning magnetic properties of BiFeO3 thin films by controlling Mn doping concentration

2018 ◽  
Vol 44 (6) ◽  
pp. 6054-6061 ◽  
Author(s):  
Yilin Zhang ◽  
Ji Qi ◽  
Yuhan Wang ◽  
Yu Tian ◽  
Junkai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Doping Concentration ◽  
Mn Doping ◽  
Bifeo3 Thin Films

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

INVESTIGATION OF THIRD-ORDER NONLINEAR OPTICAL PROPERTIES OF BFDT-DOPED PMMA THIN FILMS USING Z-SCAN TECHNIQUE

2009 ◽  
Vol 23 (28) ◽  
pp. 3361-3368
Author(s):  
HELIANG FAN ◽  
XINQIANG WANG ◽  
QUAN REN ◽  
TINGBIN LI ◽  
JING SUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Switching ◽  
Nonlinear Optical ◽  
Doping Concentration ◽  
Quartz Substrate ◽  
Nonlinear Coefficient ◽  
Nonlinear Optical Properties ◽  
Potential Candidate ◽  
Third Order

A series of polymeric thin films with BFDT (BFDT = 4,5-bis(foroylsulfanyl)-1,3-dithiole-2-thione) doped in PMMA (polymethylmethacrylate) were fabricated by means of spin-coating on quartz substrate. The third-order nonlinear optical properties of the films were investigated by Z-scan technique at 532 nm wavelength with 20 ps pulse width. The influences of doping concentration for third-order nonlinearity were also studied. A self-defocusing effect was observed from the Z-scan curves and the nonlinear refractive index of the film increases with the increase in doping concentration. Our results suggest that considerable nonlinear optical properties were found in BFDT. In addition, it was found that the nonlinear coefficient of the BFDT-doped PMMA thin film was about two orders of magnitude larger than that of homologous materials with organic solvents. By analysis, we can conclude that the material is a potential candidate for applications of nonlinear optics and can be considered in the fabrication of all-optical switching devices, etc.

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

Effect of aluminium doping concentration on microstructures, optical and electrical properties of ZnO thin films by spray pyrolysis technique

2018 ◽  
Vol 5 (3) ◽  
pp. 9519-9524 ◽  
Author(s):  
Worapot Sripianem ◽  
Alichapat Chuchuay ◽  
Pitcha Kiatthanabumrung ◽  
Natthida Saengow ◽  
Thanate Na Wichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Aluminium Doping

Doping and Annealing Effects on the Optical Bandgap of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 243-248
Author(s):  
Fatmah S. Bahabri ◽  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Doping Concentration ◽  
Cupric Oxide ◽  
Optical Bandgap ◽  
Visible Range ◽  
Bandgap Energy ◽  
Direct Bandgap ◽  
Annealing Temperatures ◽  
Annealing Effects

In this work, we study the optical properties of the Nickel doped cupric oxide Ni-CuO thin films with Ni various doping concentrations (0, 20, 30, 50, 70, and 80%), at two different annealing temperatures; 200 and 400 °C. The absorbance and optical bandgap for the films are calculated and compared. We find that all films exhibit clear peaks in the visible range, with the increase in the absorptivity via increasing both annealing and Ni concentration. We also find that the annealing affects the shape of the absorbance peaks to be narrowed and blue shifted. Investigation on the direct bandgap energy shows that all films exhibit large direct gap; ranging from 3.87 to 4.01 eV. For non-annealed films, direct bandgap increases with increasing the Ni concentration, while for the annealed samples, the direct bandgap generally decreases by annealing, and with increasing the doping concentration. For the indirect bandgap analysis, the calculated values of the bandgap are ranging from 0.62 to 1.96 eV. We find that for non-annealed films, the indirect bandgap increases with increasing the doping concentration, while after annealing, the bandgap decreases with increasing the doping concentration for the annealing at 200 and 400 °C, with more decreasing in the gap at 400 °C.

Structural Analysis of CdO2(1-X) AlX Thin Films Prepared by Pulsed-Laser Deposition

2021 ◽  
Vol 19 (10) ◽  
pp. 34-40
Author(s):  
B.Y. Taher ◽  
A.S. Ahmed ◽  
Hassan J. Alatta
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Doping Concentration ◽  
Pulsed Laser ◽  
Interplanar Distance ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Diffraction Angle ◽  
Standard Value ◽  
Diffraction Patterns

In this study, CdO2 (1-X) AlX thin films were prepared by pulsed-laser deposition. The X-ray diffraction patterns reveal that the films were polycrystalline with a cubic structure, and the composition of the material changed from CdO at the target to CdO2 in the deposited thin films. The intensity of the diffraction peak (or the texture factor) decreases with increasing hkl and has a maximum value for the (111) plane, the interplanar distance and diffraction angle has a high deviation from the standard value for the (111) plane and. This deviation is affected by doping concentration and shows its highest deviation at a doping concentration of 0.1 wt.% for the (111) and (200), and the 0.3 and 0.5 wt.% for the (210) and (220) planes, respectively. The crystalline size take a less value at plane has a high texture factor that is (111) plane and decreases with increase the doping concentration.

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