Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

2013 ◽  
Vol 103 (2) ◽  
pp. 022108 ◽  
Author(s):  
Torsten Langer ◽  
Holger Jönen ◽  
Andreas Kruse ◽  
Heiko Bremers ◽  
Uwe Rossow ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nonradiative Recombination ◽  
Quantum Well Structures ◽  
Recombination Centers ◽  
Induced Defects

Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma

2002 ◽  
Vol 36 (1) ◽  
pp. 81-84 ◽  
Author(s):  
T. S. Shamirzaev ◽  
A. L. Sokolov ◽  
K. S. Zhuravlev ◽  
A. Yu. Kobitski ◽  
H. P. Wagner ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nonradiative Recombination ◽  
Quantum Well Structures ◽  
Recombination Centers

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

1999 ◽  
Vol 75 (25) ◽  
pp. 3944-3946 ◽  
Author(s):  
D. Lüerßen ◽  
R. Bleher ◽  
H. Richter ◽  
Th. Schimmel ◽  
H. Kalt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Stacking Fault ◽  
Quantum Well Structures ◽  
Recombination Centers

Photoluminescence Imaging of III-V Substrates and Epitaxial Heterostructures

1993 ◽  
Vol 325 ◽  
Author(s):  
W. Jantz ◽  
M. Baeumler ◽  
Z.M. Wang ◽  
J. Windscheif
Keyword(s):  
Growth Parameters ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center ◽  
Layer Structures ◽  
Substrate Properties ◽  
Recombination Centers ◽  
Epitaxial Heterostructures ◽  
Induced Defects ◽  
Inp Substrates

AbstractThe characterization of III-V compound semiconductor substrates and epitaxial layers with photoluminescence imaging is reviewed. The luminescence patterns of semi-insulating GaAs are dominantly determined by the concentration and distribution of nonradiative recombination centers, as shown by comparison with spectroscopic temperature and lifetime topography of photoexcited carriers. Wafers fabricated with various growth and annealing procedures are evaluated. Presently available informations on nonradiative centers in GaAs are summarized and discussed. The correlation of luminescence, absorption and resistivity topograms of InP substrates shows various interrelated influences of the Fe acceptor distribution. High resolution luminescence images of growth induced, strain induced and substrate induced defects in epitaxial heterostructures are obtained. The generation of relaxation dislocations in pseudomorphic layers is influenced by growth parameters, layer structures, layer doping and also by substrate properties. Nonradiative recombination center patterns replicate the arrangement of threading dislocations in the substrate.

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Nakamura ◽  
M. Senoh ◽  
S. Nagahama ◽  
N. Iwasa ◽  
T. Matushita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
Output Power ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Nonradiative Recombination ◽  
Window Region ◽  
Recombination Centers

AbstractInGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Red LED with an emission peak wavelength of 650 nm was fabricated by increasing the In composition and thickness of InGaN well layer. When the laser diodes (LD) was formed on the GaN layer above the SiO2 mask region, the threshold current density was as low as 3 kAcm-2. When the LD was formed on the window region, the threshold current density was as high as 6 to 9 kAcm-2. There is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region. InGaN multi-quantum-well (MQW) structure LDs grown on the ELOG substrate showed an output power as high as 420 mW under RT-CW operation. The longest lifetime of 9,800 hours at a constant output power of 2 mW was achieved. The InGaN MQW LDs were fabricated on a GaN substrate. The fundamental transverse mode was observed up to an output power of 80 mW.

scholarly journals XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Гетероструктуры с GaAs/GaP-квантовыми ямами, выращенные на Si-подложках

2019 ◽  
Vol 53 (9) ◽  
pp. 1167
Author(s):  
Д.С. Абрамкин ◽  
М.О. Петрушков ◽  
М.А. Путято ◽  
Б.Р. Семягин ◽  
Е.А. Емельянов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Temperature Stability ◽  
Nonradiative Recombination ◽  
High Concentration ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hybrid Substrates ◽  
Recombination Centers ◽  
Lattice Matched

AbstractMolecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

scholarly journals InGaN/GaN/AlGaN-Based Leds and Laser Diodes

1999 ◽  
Vol 4 (S1) ◽  
pp. 1-17 ◽  
Author(s):  
S. Nakamura ◽  
M. Senoh ◽  
S. Nagahama ◽  
N. Iwasa ◽  
T. Matushita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
Output Power ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Nonradiative Recombination ◽  
Window Region ◽  
Recombination Centers

InGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Red LED with an emission peak wavelength of 650 nm was fabricated by increasing the In composition and thickness of InGaN well layer. When the laser diodes (LD) was formed on the GaN layer above the SiO2 mask region, the threshold current density was as low as 3 kAcm−2. When the LD was formed on the window region, the threshold current density was as high as 6 to 9 kAcm−2. There is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region. InGaN multi-quantum-well (MQW) structure LDs grown on the ELOG substrate showed an output power as high as 420 mW under RT-CW operation. The longest lifetime of 9,800 hours at a constant output power of 2 mW was achieved. The InGaN MQW LDs were fabricated on a GaN substrate. The fundamental transverse mode was observed up to an output power of 80 mW.

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