Radiative recombination rate in quantum-well structures in the model without k-selection

1997 ◽  
Vol 31 (9) ◽  
pp. 929-932 ◽  
Author(s):  
A. A. Afonenko ◽  
I. S. Manak ◽  
V. A. Shevtsov ◽  
V. K. Kononenko
Keyword(s):  
Quantum Well ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures

scholarly journals Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1736 ◽  
Author(s):  
George Christian ◽  
Menno Kappers ◽  
Fabien Massabuau ◽  
Colin Humphreys ◽  
Rachel Oliver ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Thermionic Emission ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures ◽  
Si Doped

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode

2006 ◽  
Vol 21 (2) ◽  
pp. 162-166
Author(s):  
N V Kryzhanovskaya ◽  
P Zimmer ◽  
N N Ledentsov ◽  
A Hoffmann ◽  
D Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Waveguide Mode ◽  
Radiative Recombination Rate

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

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