Nanostructural conductivity and surface-potential study of low-field-emission carbon films with conductive scanning probe microscopy

1999 ◽  
Vol 75 (22) ◽  
pp. 3527-3529 ◽  
Author(s):  
L. Zhang ◽  
T. Sakai ◽  
N. Sakuma ◽  
T. Ono ◽  
K. Nakayama
Keyword(s):  
Field Emission ◽  
Surface Potential ◽  
Scanning Probe Microscopy ◽  
Carbon Films ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Low Field ◽  
Potential Study

Conductivity and Surface Potential Studies in Carbon Films by Conductive Scanning Probe Microscopy

2000 ◽  
Vol 39 (Part 1, No. 6B) ◽  
pp. 3728-3731 ◽  
Author(s):  
Li Zhang ◽  
Tadashi Sakai ◽  
Naoshi Sakuma ◽  
Tomio Ono
Keyword(s):  
Surface Potential ◽  
Scanning Probe Microscopy ◽  
Carbon Films ◽  
Scanning Probe ◽  
Probe Microscopy

Characteristics of low field-emission diamond films by scanning probe microscopy (SPM)

2001 ◽  
Vol 10 (3-7) ◽  
pp. 829-833
Author(s):  
Li Zhang ◽  
Tadashi Sakai ◽  
Naoshi Sakuma ◽  
Tomio Ono
Keyword(s):  
Field Emission ◽  
Scanning Probe Microscopy ◽  
Diamond Films ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Low Field

Mapping the surface potential, charge density and adhesion of cellulose nanocrystals using advanced scanning probe microscopy

2020 ◽  
Vol 246 ◽  
pp. 116393 ◽  
Author(s):  
Ankur Goswami ◽  
Kazi M. Alam ◽  
Pawan Kumar ◽  
Piyush Kar ◽  
Thomas Thundat ◽  
...  
Keyword(s):  
Charge Density ◽  
Surface Potential ◽  
Scanning Probe Microscopy ◽  
Cellulose Nanocrystals ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals Origin of surface potential in undoped zinc oxide films revealed by advanced scanning probe microscopy techniques

RSC Advances ◽  
2017 ◽  
Vol 7 (67) ◽  
pp. 42393-42397
Author(s):  
Ting Su
Keyword(s):  
Zinc Oxide ◽  
Surface Potential ◽  
Scanning Probe Microscopy ◽  
Oxide Films ◽  
Scanning Probe ◽  
Zno Film ◽  
Probe Microscopy ◽  
Zinc Oxide Films ◽  
Combined Use ◽  
Microscopy Techniques

Surface potential of undoped ZnO film has been studied by a combined use of PFM and KPFM techniques.

Nanotribology of amorphous hydrogenated carbon films using scanning probe microscopy

2001 ◽  
Vol 396 (1-2) ◽  
pp. 167-173 ◽  
Author(s):  
Te-Hua Fang ◽  
Cheng-I Weng ◽  
Jee-Gong Chang ◽  
Chi-Chuan Hwang
Keyword(s):  
Scanning Probe Microscopy ◽  
Carbon Films ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Amorphous Hydrogenated Carbon

Nanotribological characterization of hydrogenated carbon films by scanning probe microscopy

1995 ◽  
Vol 258 (1-2) ◽  
pp. 75-81 ◽  
Author(s):  
Zhaoguo Jiang ◽  
C.-J. Lu ◽  
D.B. Bogy ◽  
C.S. Bhatia ◽  
T. Miyamoto
Keyword(s):  
Scanning Probe Microscopy ◽  
Carbon Films ◽  
Scanning Probe ◽  
Probe Microscopy

Variations in Electric Switching and Transverse Resistance of GeTe/ Sb2Te3 Superlattices at Elevated Temperature Studied by Conductive Scanning Probe Microscopy

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 241-246 ◽  
Author(s):  
Leonid Bolotov ◽  
Yuta Saito ◽  
Tetsuya Tada ◽  
Junji Tominaga
Keyword(s):  
Surface Potential ◽  
Scanning Probe Microscopy ◽  
Carrier Transport ◽  
Scanning Probe ◽  
Thermal Coefficient ◽  
Electric Transport ◽  
Electronic Band ◽  
Probe Microscopy ◽  
Transverse Resistance ◽  
Thermal Coefficient Of Resistance

ABSTRACTTemperature-dependent variations in electric switching and transverse resistance of phase-change [(GeTe)2(Sb2Te3)]n (n=4 and 8) chalcogenide superlattice (CSL) films were studied using conductive scanning probe microscopy (SPM). Three temperature regions with different electric transport properties were recognized in point current-voltage (I-V) spectra and the surface potential maps measured with tantalum and platinum-coated SPM cantilevers. At around 80°C the switching voltage decreased abruptly from ∼2 V to 0.5 V and the thermal coefficient of resistance changes its sign, indicating different carrier transport mechanisms. The observed changes correlated with decrease in the surface potential by ∼150 meV from 25 to 150°C. The results were ascribed to an opening of the CSL electronic band gap near the Fermi energy caused by thermal stress, which led to the transition from a Dirac-like semimetal to a narrow-gap semiconductor.

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