Grain growth in thin-film strontium sulfide electroluminescent phosphors

1999 ◽  
Vol 75 (13) ◽  
pp. 1860-1862 ◽  
Author(s):  
Y. B. Xin ◽  
C. J. Summers
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Strontium Sulfide

Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO 2 thin film

2021 ◽  
Author(s):  
Hiroaki Nakade ◽  
Eita Tochigi ◽  
Bin Feng ◽  
Ryo Ishikawa ◽  
Hiromichi Ohta ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Segregation Behavior

Simulation of thin film grain structures—II. Abnormal grain growth

1992 ◽  
Vol 40 (4) ◽  
pp. 779-793 ◽  
Author(s):  
H.J. Frost ◽  
C.V. Thompson ◽  
D.T. Walton
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Grain Structures

scholarly journals Characterization and Prediction of Texture in Laser Annealed NiTi Shape Memory Thin Films

2010 ◽  
Author(s):  
Gen Satoh ◽  
Y. Lawrence Yao ◽  
Xu Huang ◽  
Ainissa Ramirez
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Shape Memory ◽  
Grain Growth ◽  
Electron Backscatter Diffraction ◽  
Laser Crystallization ◽  
3 Dimensional ◽  
Shape Memory Properties ◽  
Melting Regime ◽  
Grain Growth Model

Thin film shape memory alloys are a promising material for use in micro-scale devices for actuation and sensing due to their strong actuating force, substantial displacements, and large surface to volume ratios. NiTi, in particular, has been of great interest due to its biocompatibility and corrosion resistance. Effort has been directed toward adjusting the microstructure of as-deposited films in order to modify their shape memory properties for specific applications. The anisotropy of the shape memory and superelastic effects suggests that inducing preferred orientations could allow for optimization of shape memory properties. Limited work, however, has been performed on adjusting the crystallographic texture of these films. In this study, thin film NiTi samples are processed using excimer laser crystallization and the effect on the overall preferred orientation is analyzed through the use of electron backscatter diffraction and x-ray diffraction. A 3-dimensional Monte Carlo grain growth model is developed to characterize textures formed through surface energy induced abnormal grain growth during solidification. Furthermore, a scaling factor between Monte Carlo steps and real time is determined to aid in the prediction of texture changes during laser crystallization in the partial melting regime.

scholarly journals Stacking fault reduction during annealing in Cu-poor CuInSe2 thin film solar cell absorbers analyzed by in situ XRD and grain growth modeling

2019 ◽  
Vol 125 (3) ◽  
pp. 035303 ◽  
Author(s):  
Helena Stange ◽  
Stephan Brunken ◽  
Dieter Greiner ◽  
Marc Daniel Heinemann ◽  
Daniel Antonio Barragan Yani ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Grain Growth ◽  
Thin Film Solar Cell ◽  
Growth Modeling ◽  
Stacking Fault ◽  
In Situ Xrd ◽  
Cuinse2 Thin Film

scholarly journals Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Metals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 12 ◽  
Author(s):  
Hayk Khachatryan ◽  
Sung-Nam Lee ◽  
Kyoung-Bo Kim ◽  
Moojin Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Growth Process ◽  
Film Growth ◽  
Specular Reflection ◽  
Steel Substrate ◽  
Al Thin Film

In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips

1994 ◽  
Vol 338 ◽  
Author(s):  
H.J. Frost ◽  
Y. Hayashi ◽  
C.V. Thompson ◽  
D.T. Walton
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
Strip Width ◽  
Grain Boundary Energy ◽  
Triple Junctions ◽  
Interconnect Reliability ◽  
Bamboo Structure ◽  
Grain Boundary Pinning

ABSTRACTGrain growth in thin-film strips is important to interconnect reliability because grain boundary structures strongly effect the rate and mechanism of electromigration-induced failure. Previous simulations of this process have indicated that the transformation to the fully bamboo structure proceeds at a rate which decreases exponentially with time, and which is inversely proportional to the square of the strip width. We have also reported that grain boundary pinning due to surface grooving implies that there exists a maximum strip width to thickness ratio beyond which the transformation to the bamboo structure does not proceed to completion. In this work we have extended our simulation of grain growth in thin films and thin film strips to consider the effects of variations in grain boundary energy. Boundary energy is taken to depend on the misorientation between the two neighboring grain and the resulting variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. In the case of thin-film strips, the effect of boundary energy variability is to impede the transformation to the bamboo structure, and reduce the width above which the complete bamboo structure is never reached. Those boundaries which do remain upon stagnation tend to be of low energy (low misorientation angle) and are therefore probably of low diffusivity, so that their impact on reliability is probably reduced.

Three-dimensional monte-carlo simulation of grain growth in Pt-Co thin film

2002 ◽  
Vol 31 (10) ◽  
pp. 965-971 ◽  
Author(s):  
Sung Il Park ◽  
Sang Soo Han ◽  
Hyoung Gyu Kim ◽  
Joong Keun Park ◽  
Hyuck Mo Lee
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Grain Growth ◽  
Three Dimensional
Sign in / Sign up

Export Citation Format

Share Document