Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

1999 ◽  
Vol 75 (1) ◽  
pp. 97-99 ◽  
Author(s):  
Wai Lek Ng ◽  
M. P. Temple ◽  
P. A. Childs ◽  
F. Wellhofer ◽  
K. P. Homewood
Keyword(s):  
Laser Ablation ◽  
Photoluminescence Excitation ◽  
Er Doped

Nanoparticles of Er-doped glass produced by laser ablation of microparticles

2006 ◽  
Vol 23 (8) ◽  
pp. 1581
Author(s):  
John W. Keto ◽  
Michael F. Becker ◽  
Desiderio Kovar ◽  
Gokul Malyavanatham ◽  
Andreas Muller ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Er Doped ◽  
Doped Glass

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation

2006 ◽  
Vol 84 (4) ◽  
pp. 395-401 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Morihiro ◽  
K. Murakami ◽  
M. Mitome ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Er Doped ◽  
Hydrogenation Effect ◽  
Si Nanocrystallites

Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO2 - Increase in Photoluminescence-

2004 ◽  
Vol 832 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Uematsu ◽  
T. Arai ◽  
T. Makimura ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Signal Intensity ◽  
Hydrogen Gas ◽  
Hydrogen Passivation ◽  
Si Substrate ◽  
Gas Atmosphere ◽  
Oxygen Gas ◽  
Pl Intensity ◽  
Er Doped ◽  
Si Nanocrystallites

ABSTRACTHydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.

The optically active center and its activation process in Er-doped Si thin film produced by laser ablation

1999 ◽  
Vol 85 (8) ◽  
pp. 4024-4031 ◽  
Author(s):  
Masashi Ishii ◽  
Tetsuya Ishikawa ◽  
Tatzuo Ueki ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Active Center ◽  
Optically Active ◽  
Activation Process ◽  
Er Doped ◽  
Si Thin Film
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