Photoluminescence‐excitation analysis of Er‐doped GaAs grown by metalorganic vapor phase deposition

1995 ◽  
Vol 77 (4) ◽  
pp. 1735-1740 ◽  
Author(s):  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Vapor Phase ◽  
Photoluminescence Excitation ◽  
Vapor Phase Deposition ◽  
Er Doped

scholarly journals Photoluminescence and Photoluminescence Excitation Spectroscopy of in Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 946-951
Author(s):  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
R. Zhang ◽  
D. M. Hansen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Absorption Bands ◽  
Pl Spectra ◽  
Er Doped

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 → 4I15/2 emission of Er3+ in in situ Er-doped and Erimplanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er3+ sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH3/H2 atmosphere.

Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
R. Zhang ◽  
D. M. Hansen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Absorption Bands ◽  
Pl Spectra ◽  
Er Doped

AbstractPhotoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 ← 4I15/2 emission of Er3+ in in situ Er-doped and Er-implanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH 3/H2 atmosphere.

52.3: Invited Paper: OLED Manufacturing by Organic Vapor Phase Deposition

2003 ◽  
Vol 34 (1) ◽  
pp. 1419 ◽  
Author(s):  
Markus Schwambera ◽  
Nico Meyer ◽  
Markus Gersdorff ◽  
Markus Reinhold ◽  
Gerd Strauch ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition

Organic vapor phase deposition for the growth of large area organic electronic devices

2009 ◽  
Vol 95 (23) ◽  
pp. 233305 ◽  
Author(s):  
Richard R. Lunt ◽  
Brian E. Lassiter ◽  
Jay B. Benziger ◽  
Stephen R. Forrest
Keyword(s):  
Vapor Phase ◽  
Electronic Devices ◽  
Large Area ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition

Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 239-244 ◽  
Author(s):  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
A. Duk ◽  
A. Kwasniewski ◽  
S. Bin Anooz ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Bismuth Titanate ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sodium Bismuth Titanate ◽  
Vapor Phase Deposition ◽  
Metal Organic
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