The optically active center and its activation process in Er-doped Si thin film produced by laser ablation

1999 ◽  
Vol 85 (8) ◽  
pp. 4024-4031 ◽  
Author(s):  
Masashi Ishii ◽  
Tetsuya Ishikawa ◽  
Tatzuo Ueki ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Active Center ◽  
Optically Active ◽  
Activation Process ◽  
Er Doped ◽  
Si Thin Film

Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence

2001 ◽  
Vol 78 (2) ◽  
pp. 183-185 ◽  
Author(s):  
Masashi Ishii ◽  
Yoshihito Tanaka ◽  
Tetsuya Ishikawa ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
Active Center ◽  
Optically Active ◽  
X Ray ◽  
Optical Luminescence ◽  
Semiconductor Thin Film ◽  
Er Doped ◽  
Site Selective ◽  
X Ray Absorption

Local structure analysis of an optically active center in Er-doped ZnO thin film

2001 ◽  
Vol 89 (7) ◽  
pp. 3679-3684 ◽  
Author(s):  
Masashi Ishii ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
Yoshinobu Aoyagi
Keyword(s):  
Thin Film ◽  
Active Center ◽  
Structure Analysis ◽  
Local Structure ◽  
Optically Active ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Er Doped

The optically active center of Er-doped Si produced by laser ablation

1999 ◽  
Vol 6 (3) ◽  
pp. 477-479 ◽  
Author(s):  
M. Ishii ◽  
S. Komuro ◽  
T. Morikawa ◽  
Y. Aoyagi ◽  
H. Oyanagi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Active Center ◽  
Optically Active ◽  
Er Doped

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

2003 ◽  
Vol 16 (3-4) ◽  
pp. 400-403
Author(s):  
Do Young Kim ◽  
Ji Sim Jung ◽  
Young Rae Jang ◽  
Kun Ho Yoo ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Si Thin Film
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