Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

1999 ◽  
Vol 74 (16) ◽  
pp. 2358-2360 ◽  
Author(s):  
B. J. Skromme ◽  
J. Jayapalan ◽  
R. P. Vaudo ◽  
V. M. Phanse
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect States

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN

1999 ◽  
Vol 59 (1-3) ◽  
pp. 12-15 ◽  
Author(s):  
Jeong-wook Lee ◽  
Ho-sun Paek ◽  
Ji-Beom Yoo ◽  
Gyeung-ho Kim ◽  
Dong-Wha Kum
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

Low-Temperature Hydride Vapor Phase Epitaxy of GaN Layers on Different Substrates

1998 ◽  
pp. 95-98
Author(s):  
R. Fornari ◽  
G. Attolini ◽  
C. Pelosi ◽  
C. B. Cao ◽  
A. Paccagnini ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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