scholarly journals Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

2017 ◽  
Vol 5 (21) ◽  
pp. 5048-5054 ◽  
Author(s):  
Tim Leydecker ◽  
Laura Favaretto ◽  
Duc Trong Duong ◽  
Gabriella Zappalà ◽  
Karl Börjesson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Structural Similarity ◽  
Single Component ◽  
Electrical Performance ◽  
Field Effect Mobility ◽  
Solution Processed

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.

Solution-processed n-type organic thin-film transistors with high field-effect mobility

2005 ◽  
Vol 87 (20) ◽  
pp. 203504 ◽  
Author(s):  
Masayuki Chikamatsu ◽  
Shuichi Nagamatsu ◽  
Yuji Yoshida ◽  
Kazuhiro Saito ◽  
Kiyoshi Yase ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Solution Processed

scholarly journals Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 508 ◽  
Author(s):  
Hyun Jae Kim ◽  
Chul Jong Han ◽  
Byungwook Yoo ◽  
Jeongno Lee ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Annealing Process ◽  
Intense Pulsed Light ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Pulsed Light ◽  
Solution Processed ◽  
Rapid Annealing

We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.

scholarly journals Importance of Blade-Coating Temperature for Diketopyrrolopyrrole-based Thin-Film Transistors

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 346 ◽  
Author(s):  
Jun-Ik Park ◽  
Hyeon-Seok Jeong ◽  
Do-Kyung Kim ◽  
Jaewon Jang ◽  
In Man Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Room Temperature ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Donor Acceptor ◽  
Coating Temperature ◽  
Blade Coating

In this work, the effect of blade-coating temperature on the electrical properties of a conjugated donor–acceptor copolymer containing diketopyrrolopyrrole (DPP)-based thin-film transistors (TFTs) was systematically analyzed. The organic semiconductor (OSC) layers were blade-coated at various blade-coating temperatures from room temperature (RT) to 80 °C. No remarkable changes were observed in the thickness, surface morphology, and roughness of the OSC films as the blade-coating temperature increased. DPP-based TFTs exhibited two noticeable tendencies in the magnitude of field-effect mobility with increasing blade-coating temperatures. As the temperature increased up to 40 °C, the field-effect mobility increased to 148% compared to the RT values. On the contrary, when the temperature was raised to 80 °C, the field-effect mobility significantly reduced to 20.9% of the mobility at 40 °C. These phenomena can be explained by changes in the crystallinity of DPP-based films. Therefore, the appropriate setting of the blade-coating temperature is essential in obtaining superior electrical characteristics for TFTs. A blade-coating temperature of 40 °C was found to be the optimum condition in terms of electrical performance for DPP-based TFTs.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase
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