Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition

1999 ◽  
Vol 74 (24) ◽  
pp. 3711-3713 ◽  
Author(s):  
G. D. Hu ◽  
J. B. Xu ◽  
I. H. Wilson ◽  
W. Y. Cheung ◽  
N. Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Metalorganic Decomposition

scholarly journals Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025106
Author(s):  
Xinjun Wang ◽  
Sergiy Krylyuk ◽  
Daniel Josell ◽  
Delin Zhang ◽  
Deyuan Lyu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Perpendicular Magnetic Anisotropy

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

1998 ◽  
Vol 73 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Z. G. Zhang ◽  
J. S. Liu ◽  
Y. N. Wang ◽  
J. S. Zhu ◽  
F. Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Fatigue Characteristics ◽  
Metalorganic Decomposition

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

2001 ◽  
Vol 79 (3) ◽  
pp. 403-405 ◽  
Author(s):  
E. Rokuta ◽  
Y. Hotta ◽  
T. Kubota ◽  
H. Tabata ◽  
H. Kobayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Silicon Oxynitride

scholarly journals Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065305 ◽  
Author(s):  
Junichi Shiogai ◽  
Kazuki Nishihara ◽  
Kazuhisa Sato ◽  
Atsushi Tsukazaki
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Electron Mobility ◽  
Atomically Flat
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