Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates

2013 ◽  
Vol 540 ◽  
pp. 183-189 ◽  
Author(s):  
Shu-Han Hsu ◽  
Chun-Lin Chu ◽  
Guang-Li Luo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Dry Etching ◽  
Etching Process ◽  
Si Substrates

(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

2015 ◽  
Vol 66 (1) ◽  
pp. 191-199 ◽  
Author(s):  
C.- F. Lo ◽  
O. Laboutin ◽  
C.- K. Kao ◽  
K. O'Connor ◽  
D. Hill ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

p-Type Tunneling Field-Effect Transistors on (100)- and (110)-Oriented Si Substrates

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PC01
Author(s):  
Min Hung Lee ◽  
Bin-Fong Hsieh ◽  
Tong-Han Wu ◽  
Shu Tong Chang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Tunneling Field Effect Transistors ◽  
P Type

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

2007 ◽  
Vol 28 (11) ◽  
pp. 1044-1046 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Hideok Lee ◽  
Oooksang Yoo ◽  
Sanjay Banerjee ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Epitaxial Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Si Substrates

Ultrathin body InAs tunneling field-effect transistors on Si substrates

2011 ◽  
Vol 98 (11) ◽  
pp. 113105 ◽  
Author(s):  
Alexandra C. Ford ◽  
Chun Wing Yeung ◽  
Steven Chuang ◽  
Ha Sul Kim ◽  
Elena Plis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Tunneling Field Effect Transistors

Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

2005 ◽  
Vol 49 (3) ◽  
pp. 497-504 ◽  
Author(s):  
Sun Il Shim ◽  
Young Suk Kwon ◽  
Seong-Il Kim ◽  
Yong Tae Kim ◽  
Jung Ho Park
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dry Etching ◽  
Etching Process ◽  
Effect Transistor

Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1552-1554 ◽  
Author(s):  
G. W. Wang ◽  
C. Ito ◽  
M. Feng ◽  
R. Kaliski ◽  
D. McIntyre ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates
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