Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH4 microwave plasma

1998 ◽  
Vol 73 (12) ◽  
pp. 1646-1648 ◽  
Author(s):  
Thomas G. McCauley ◽  
Dieter M. Gruen ◽  
Alan R. Krauss
Keyword(s):  
Growth Rate ◽  
Temperature Dependence ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

Nanocrystalline Diamond Films Deposited by Two-Step Approach from CH4/H2 Microwave Plasma: The Influence of Reactor Pressure

2013 ◽  
Vol 339 ◽  
pp. 657-664 ◽  
Author(s):  
S.T. Khlayboonme ◽  
W. Thowladda
Keyword(s):  
Growth Rate ◽  
Electron Density ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Growth Step ◽  
Si Substrates ◽  
Bonding Structure ◽  
Nanocrystalline Diamond Films ◽  
Diamond Grain

The morphology, growth rate and atomic-bonding structure of nanocrystalline diamond films deposited on Si substrates were investigated under various pressures of the reactor. The films were deposited by CH4/H2 microwave plasma with two-step deposition and H2-plasma cleaning processes. The pressures of 1, 2, 5, 9, and 25 kPa were used for deposition. In situ gas-phase species, including electron density, were monitored by an optical spectrometer and impedance analyzer. The films were characterized by SEM, Raman microscope, and white light reflectrometer. When the pressure increased, the surface smoothness and diamond grain size increased, amorphous carbon content decreased, and the intensity ratio of CH/Hβ for the growth step increased. The growth rate was in proportional to the ratio of CH/Hβ for the nucleation step but in inverse proportion to the electron density. The growth rates decreased from 370 nm/h for 1 kPa to 320 nm/h for 2 kPa. After that, the growth rate rapidly increased to 460 nm/h for 9 kPa, but it gradually decreased to 450 nm/h for 25 kPa. The film refractive indices were 2.16 for 5 kPa, 2.21 for 9 kPa, and 2.38 for 25 kPa. The films grown under 1 and 2 kPa showed highly light absorption.

Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

2021 ◽  
Vol 55 (1) ◽  
pp. 66-75
Author(s):  
A. L. Vikharev ◽  
S. A. Bogdanov ◽  
N. M. Ovechkin ◽  
O. A. Ivanov ◽  
D. B. Radishev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

Evaluation of Wear Rate of Nanocrystalline Diamond Films Using Abbott Curve

2017 ◽  
Vol 267 ◽  
pp. 185-189
Author(s):  
Andrei Bogatov ◽  
Vitali Podgursky
Keyword(s):  
Wear Rate ◽  
Cross Sections ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Nanocrystalline Diamond ◽  
Wear Rates ◽  
Nanocrystalline Diamond Films ◽  
Worn Surface

The nanocrystalline diamond films were deposited by microwave plasma enhanced chemical vapour deposition (PE-CVD) on Si (100) substrate. Reciprocating sliding tests were conducted using Si3N4 balls as a counter body. A method based on the construction of the Abbott curve representing the areas of pristine and worn surface in the wear scars was applied for estimation of the wear rate. The calculated wear rates were compared with the results obtained by profilometric measurements and direct measurement of the wear scars cross sections by scanning electron microscopy (SEM).

scholarly journals Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chii-Ruey Lin ◽  
Da-Hua Wei ◽  
Minh-Khoa BenDao ◽  
Hong-Ming Chang ◽  
Wei-En Chen ◽  
...  
Keyword(s):  
Surface Modification ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Plasma Jet ◽  
Nanocrystalline Diamond ◽  
Initial Growth ◽  
Nanocrystalline Diamond Films

The seedings of the substrate with a suspension of nanodiamond particles (NDPs) were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms) on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

Thermal Stability of Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
Mevlut Bulut ◽  
Shane A. Catledge ◽  
Yogesh K. Vohra ◽  
Renato P. Camata
Keyword(s):  
Thermal Stability ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Nanocrystalline Diamond Films ◽  
Thermal Stability Of

ABSTRACTIn this work, the open-air thermal stability of nanocrystalline diamond films grown on mirror-polished titanium alloy substrates by the Microwave Plasma Chemical Vapor Deposition (MPCVD) technique was studied. The results of this investigation show that nanocrystalline diamond films are highly stable in air up to 600°C with no significant change in mechanical properties. Samples annealed between 600°C and 650°C, however, exhibit values of hardness lower by as much as 40% compared to as-grown samples. Above 650°C serious delamination effects were observed in the coatings.

MPACVD Nanocrystalline Diamond for Biomedical Applications

2007 ◽  
Vol 280-283 ◽  
pp. 1595-1598 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Rong Qi ◽  
Wu Bao Yang
Keyword(s):  
Biomedical Applications ◽  
Microwave Plasma ◽  
Optical Glass ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Nanocrystalline Diamond ◽  
X Ray Diffraction ◽  
Nanocrystalline Diamond Films

In the present paper, nanocrystalline diamond films (NDFs) were fabricated on optical glass using microwave plasma assisted chemical vapor deposition (MPACVD). The suitable processing parameters are as followings: methane concentration 3% in argon, total deposition pressure 13.3 kPa, substrate temperature 500 °C. The diamond films were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. In vitro osteoblast cell cultures and platelet adhesion tests were applied to evaluate the biocompatibility of the nanocrystalline diamond films (NDFs). All results indicate that the diamond films exhibit better tissue compatibility and hemocompatibility which are very suitable for biomedical applications.

The Microstructure and Enhanced Field Electron Emission Properties of Boron-Doped Nanocrystalline Diamond Films by Microwave Plasma Chemical Vapor Deposition

2010 ◽  
Vol 152-153 ◽  
pp. 413-417
Author(s):  
You Sheng Zou ◽  
Zheng Xue Li ◽  
Hao Yang
Keyword(s):  
Electron Emission ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Field Electron Emission ◽  
Nanocrystalline Diamond ◽  
Gas Mixture ◽  
Emission Properties ◽  
Boron Doped ◽  
Field Electron ◽  
Nanocrystalline Diamond Films

The boron-doped nanocrystalline diamond films were prepared on Si(100) substrates by microwave plasma chemical vapor deposition in gas mixture of CH4/H2/trimethylboron (TMB) with B/C ratio in the range of 0-1900ppm. The dependencies of surface morphology, microstructure, phase composition and field electron emission properties on the B/C ratio were systematically investigated by scanning electron microscope, X-ray diffractometer, visible and UV Raman spectroscopy. The results show that the diamond grains gather together forming ball-like clusters with inhomogeneous size, the doped boron atoms can promote the growth of plane (111) surface and terminate the diamond growth sites, resulting in the reduction of growth rate with the increase of B/C ratio in the gas mixture. The two peaks located at approximately 500 and 1220cm-1 resulted from Fano interference were observed in the visible Raman spectra for the heavily boron-doped nanocrystalline diamond film, and the sp2/sp3 ratio of carbon bonds increased with B/C ratio increasing in gas mixture. The field electron emission performances of the boron-doped nanocrystalline diamond films were obviously dependent on B/C ratio in the gas mixture, and boron doping can improve their field electron emission properties remarkably. The low turn-on electric field of 7.6V/μm was achieved for the boron-doped nanocrystalline diamond film deposited at B/C ratio of 1900ppm.

Phase Transformation of Nanocrystalline Diamond Films: Effect of Methane Concentration

2020 ◽  
Vol 831 ◽  
pp. 127-131
Author(s):  
S.Tipawan Khlayboonme ◽  
Thowladda Warawoot
Keyword(s):  
Phase Transformation ◽  
Gas Phase ◽  
Electron Density ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Graphite Phase ◽  
Diamond Phase ◽  
Nanocrystalline Diamond Films

Ultra-nanocrystalline diamond films were prepared by a microwave plasma-enhanced chemical vapor deposition reactor using CH4/H2 gas mixture with a power as low as 650 W. The effects of CH4 concentration on nanostructure of the films and gas-phase species in plasma were investigated. The CH4 concentrations of 1.5%, 3.0%, 3.5%, and 4.0% were used and balanced with H2 to a total flow rate of 200 sccm. Morphology and composition of the films were characterized by SEM, Raman spectroscopy and Auger spectroscopy. The gas-phase species and electron density in the plasma were explored by optical emission spectroscopy and plasma-impedance measurement. The increasing CH4 concentration from 1.5% to 4.0% increased C2Hx species and decreased electron density. Phase of the film transform from nano- into ultranano- diamond phase but the growth rate revealingly decreased from 300 to 210 nm/h. Raman spectra indicate the higher CH4 concentration promted phase of the film transiton from NCD to UNCD. While Auger spectra revealed that UNCD film deposited with 4.0%CH4 was composed of 90.52% diamond phase but only 9.48% of graphite phase. The relation between phase transformation of the films and growth mechnism controlled by gas-phase species in the plasma will be dissused.

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