Trap states of tris-8-(hydroxyquinoline) aluminum and naphthyl-substituted benzidine derivative using thermally stimulated luminescence

1998 ◽  
Vol 73 (11) ◽  
pp. 1457-1459 ◽  
Author(s):  
E. W. Forsythe ◽  
D. C. Morton ◽  
C. W. Tang ◽  
Yongli Gao
Keyword(s):  
Trap States ◽  
Thermally Stimulated Luminescence

Trap states in doped tris-8-(hydroxyquinoline) aluminum using thermally stimulated luminescence

1998 ◽  
Author(s):  
Eric W. Forsythe ◽  
David C. Morton ◽  
Ching W. Tang ◽  
Yongli Gao
Keyword(s):  
Trap States ◽  
Thermally Stimulated Luminescence

Thermally Stimulated Luminescence of Naphthylsubstituted Benzidine Derivative and Tris-8-(Hydroxyquinoline) Aluminum With and Without Metal Layers

1997 ◽  
Vol 488 ◽  
Author(s):  
E. W. Forsythe ◽  
D. C. Morton ◽  
Y. Gao
Keyword(s):  
Carrier Transport ◽  
Light Emission ◽  
Trap Depth ◽  
Trap States ◽  
Thermally Stimulated Luminescence ◽  
Device Structure ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Wide Range ◽  
Metal Layers

AbstractMultilayer organic light emitting devices based on tris-8-(hydroxyquinoline) aluminum (Alq3) and a naphthyl-substituted benzidine derivative (NPB) have demonstrated practical electroluminescence with a wide range of color. Trap states in these materials play an important role in the carrier transport as well as the light emission process. We report the first observation of thermally stimulated luminescence (TSL) from Alq3 and NPB. The TSL spectra from 8 K to 300 K were used to determine the trap states in Alq3 and NPB. The results for Alq3 show a significant trap distribution at 156 K, which corresponds to a mean trap depth ranging from 0.18 to 0.12 eV, whereas the trap states in NPB are centered from 0.15 eV to 0.01 eV. We have used TSL to study the trap state properties of thin metal layers in the Alq3 films. In addition, we report photoluminescence as a function of temperature for Alq3. TSL spectroscopy provides a technique to study the trap states in a specific layer of the device structure.

Trap-states in monodisperse formamidinium tin iodide nanocrystals

2020 ◽  
Author(s):  
Dmitry Dirin ◽  
Anna Vivani ◽  
Maryna Bodnarchuk ◽  
Ihor Cherniukh ◽  
Antonietta Guagliardi ◽  
...  
Keyword(s):  
Trap States ◽  
Tin Iodide

Thermally Stimulated Luminescence of ZnO Nanowires

2017 ◽  
Vol 9 (2) ◽  
pp. 02018-1-02018-3
Author(s):  
M. R. Panasiuk ◽  
◽  
B. I. Turko ◽  
L. R. Toporovska ◽  
V. B. Kapustianyk ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Thermally Stimulated Luminescence

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

2003 ◽  
Vol 0 (7) ◽  
pp. 2400-2403 ◽  
Author(s):  
R. M. Chu ◽  
Y. G. Zhou ◽  
K. J. Chen ◽  
K. M. Lau
Keyword(s):  
Trap States

Efficient Defect Passivation with Niacin for High-Performance and Stable Perovskite Solar Cells

2021 ◽  
Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Trap States ◽  
Carrier Recombination ◽  
Defect Passivation ◽  
Recombination Centers ◽  
Charge Carrier Recombination ◽  
Halide Perovskite

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

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