Trap states in electroluminescent SrS:Cu phosphor thin films using thermally stimulated luminescence

1999 ◽  
Author(s):  
David C. Morton ◽  
Eric W. Forsythe ◽  
Sey-Shing Sun
Keyword(s):  
Thin Films ◽  
Trap States ◽  
Thermally Stimulated Luminescence

Photophysical Properties of CdS Nanoparticles in Thin Films for Opto-Chemical Sensing

2004 ◽  
Vol 820 ◽  
Author(s):  
Elena A. Guliants ◽  
Barbara A. Haruff ◽  
James R. Gord ◽  
Christopher E. Bunker
Keyword(s):  
Thin Films ◽  
Organic Compounds ◽  
Protective Coatings ◽  
Photophysical Properties ◽  
Sol Gel ◽  
Liquid Solution ◽  
Optical Signal ◽  
Cds Nanoparticles ◽  
Trap States ◽  
Post Synthesis

AbstractIn recent years, II-VI compound semiconductor nanoparticles synthesized in a liquid solution have been shown to possess unique optoelectronic properties which are highly attractive for the fabrication of various sensors based on the optical signal readout scheme. The challenge has been to immobilize these nanoparticles into films on solid surfaces, i.e. on a chip, so that they do not suffer any property deterioration as a sensing medium. In the presented work, synthesis of CdS nanoparticles in reverse micelle solution using AOT surfactant as a stabilizer has led to particles with relatively bright photoemission identified as originating from both shallow and deep traps inside the bandgap. Moreover, slightly altering the preparation procedure has produced samples with two distinctive crystal structures. Both types of CdS nanoparticles suspended in commonly utilized solvents such as chloroform and hexane were subject to chemical quenching when various organic compounds were introduced into the solution, demonstrating the sensitivity of trap states to their chemical environment. However, the two structures have shown very different optical properties. While post-synthesis treatment had no effect on one type of particle, the other type was able to undergo a photochemical reaction via prolonged UV irradiation, which resulted in an increased luminescence quantum yield ÖL from 2% to 14%. The same particle type was also responsive to thermal treatment, showing even higher values of ÖL (∼40%). The CdS/AOT particles have been cast into thin films by spin-coating on a Si wafer. Coating parameters have been investigated in order to achieve optimal control over the film thickness, uniformity, overall film durability, etc. These nanostructured films capped with various porous polymeric and sol-gel protective coatings were exposed to a series of organic compounds. Photoluminescence data collected for these samples served for identification of the compounds and their concentrations. This paper offers the discussion of photophysical response in CdS nanoparticle-based thin films with respect to development of novel nanostructured opto-chemical sensors.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

scholarly journals Efficient Photo- and Electroluminescence by Trap States Passivation in Vacuum-Deposited Hybrid Perovskite Thin Films

2018 ◽  
Vol 10 (42) ◽  
pp. 36187-36193 ◽  
Author(s):  
Benedikt Dänekamp ◽  
Nikolaos Droseros ◽  
Francisco Palazon ◽  
Michele Sessolo ◽  
Natalie Banerji ◽  
...  
Keyword(s):  
Thin Films ◽  
Trap States ◽  
Hybrid Perovskite

Thermally stimulated luminescence of SrS:Cu thin films

2001 ◽  
Vol 78 (10) ◽  
pp. 1400-1402 ◽  
Author(s):  
D. C. Morton ◽  
E. W. Forsythe ◽  
S.-S. Sun ◽  
M. C. Wood ◽  
M. H. Ervin ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermally Stimulated Luminescence

Trap states in doped tris-8-(hydroxyquinoline) aluminum using thermally stimulated luminescence

1998 ◽  
Author(s):  
Eric W. Forsythe ◽  
David C. Morton ◽  
Ching W. Tang ◽  
Yongli Gao
Keyword(s):  
Trap States ◽  
Thermally Stimulated Luminescence

Electrical Properties of Silicon Nitride Thin Films Fabricated by ECR PECVD at Room Temperature

1992 ◽  
Vol 284 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Hoyoung Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Trap States ◽  
Dominant Conduction Mechanism ◽  
Frenkel Emission ◽  
New Interpretation

ABSTRACTSilicon nitride thin films were deposited on single crystalline silicon substrates at room temperature by ECR PECVD with SiH4 and N2 as source gases and the electrical properties were analyzed. The dominant conduction mechanism in a high field was Poole-Frenkel emission. A ledge in I-V curve was observed in the first voltage ramp and it was found to originate from the field reduction at the injecting electrode due to the charge trapped in deep traps in the film. It also turned out that the ledge is a characteristic of monopolar conduction. A new interpretation of the current at low field — tunneling into trap states — was proposed and the current variations according to the field and temperature could be well explained.

scholarly journals Avoiding trap states in poly(n-vinylcarbazole) thin films

2012 ◽  
Vol 13 (12) ◽  
pp. 2843-2849 ◽  
Author(s):  
K.A.S. Araujo ◽  
P.S.S. Guimarães ◽  
L.A. Cury ◽  
L. Akcelrud ◽  
D. Sanvitto ◽  
...  
Keyword(s):  
Thin Films ◽  
Trap States
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