Thermally Stimulated Luminescence of Naphthylsubstituted Benzidine Derivative and Tris-8-(Hydroxyquinoline) Aluminum With and Without Metal Layers

1997 ◽  
Vol 488 ◽  
Author(s):  
E. W. Forsythe ◽  
D. C. Morton ◽  
Y. Gao
Keyword(s):  
Carrier Transport ◽  
Light Emission ◽  
Trap Depth ◽  
Trap States ◽  
Thermally Stimulated Luminescence ◽  
Device Structure ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Wide Range ◽  
Metal Layers

AbstractMultilayer organic light emitting devices based on tris-8-(hydroxyquinoline) aluminum (Alq3) and a naphthyl-substituted benzidine derivative (NPB) have demonstrated practical electroluminescence with a wide range of color. Trap states in these materials play an important role in the carrier transport as well as the light emission process. We report the first observation of thermally stimulated luminescence (TSL) from Alq3 and NPB. The TSL spectra from 8 K to 300 K were used to determine the trap states in Alq3 and NPB. The results for Alq3 show a significant trap distribution at 156 K, which corresponds to a mean trap depth ranging from 0.18 to 0.12 eV, whereas the trap states in NPB are centered from 0.15 eV to 0.01 eV. We have used TSL to study the trap state properties of thin metal layers in the Alq3 films. In addition, we report photoluminescence as a function of temperature for Alq3. TSL spectroscopy provides a technique to study the trap states in a specific layer of the device structure.

Non-linear light emission of inorganic protonic diodes, H+LEDs

2021 ◽  
Vol 9 (9) ◽  
pp. 3052-3057
Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak
Keyword(s):  
Light Emission ◽  
Stimulated Raman Scattering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Pulses ◽  
Optical Effects ◽  
Non Linear ◽  
Intense Light ◽  
Light Beams ◽  
Intense Light Pulses

H+LEDs are light emitting devices based on a protonic p–n junction; now with no organic polymers. The unique are non-linear optical effects: collimated light beams and stimulated Raman scattering (SRS), observed while generating intense light pulses.

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

scholarly journals Widely applicable phosphomolybdic acid doped poly(9-vinylcarbazole) hole transport layer for perovskite light-emitting devices

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30398-30405
Author(s):  
Yanting Wu ◽  
Zewu Xiao ◽  
Lihong He ◽  
Xiaoli Yang ◽  
Yajun Lian ◽  
...  
Keyword(s):  
Phosphomolybdic Acid ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Wide Range ◽  
Selection Of ◽  
Range Selection

Perovskite light-emitting devices using a PVK:PMA hole transport layer show robust performance, allowing the wide range selection of antisolvents and hole injection layers.

scholarly journals The dark exciton ground state promotes photon-pair emission in individual perovskite nanocrystals

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Philippe Tamarat ◽  
Lei Hou ◽  
Jean-Baptiste Trebbia ◽  
Abhishek Swarnkar ◽  
Louis Biadala ◽  
...  
Keyword(s):  
Near Infrared ◽  
Exciton State ◽  
Lead Iodide ◽  
Electron Hole ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Light Emitting Devices ◽  
Optical And Electronic Properties ◽  
Wide Range ◽  
Halide Perovskites

AbstractCesium lead halide perovskites exhibit outstanding optical and electronic properties for a wide range of applications in optoelectronics and for light-emitting devices. Yet, the physics of the band-edge exciton, whose recombination is at the origin of the photoluminescence, is not elucidated. Here, we unveil the exciton fine structure of individual cesium lead iodide perovskite nanocrystals and demonstrate that it is governed by the electron-hole exchange interaction and nanocrystal shape anisotropy. The lowest-energy exciton state is a long-lived dark singlet state, which promotes the creation of biexcitons at low temperatures and thus correlated photon pairs. These bright quantum emitters in the near-infrared have a photon statistics that can readily be tuned from bunching to antibunching, using magnetic or thermal coupling between dark and bright exciton sublevels.

scholarly journals Novel carbazole-based donor-isoindolo[2,1-a]benzimidazol-11-one acceptor polymers for ternary flash memory and light-emission

RSC Advances ◽  
2019 ◽  
Vol 9 (47) ◽  
pp. 27665-27673
Author(s):  
Qian Zhang ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
Dongge Ma ◽  
Cheng Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Light Emission ◽  
Light Emitting ◽  
Light Emitting Devices

Newly designed and synthesized carbazole-based D–A polymers for ternary flash memory and light-emitting devices.

Silicate conductive filament assisted broadband light emission of HfO2 high-k solid state incandescent devices

2018 ◽  
Vol 6 (29) ◽  
pp. 7913-7919 ◽  
Author(s):  
Yiwei Liu ◽  
Gang Niu ◽  
Can Yang ◽  
Shengli Wu ◽  
Liyan Dai ◽  
...  
Keyword(s):  
Solid State ◽  
Light Emission ◽  
Conductive Filament ◽  
Promising Candidate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High K

High-k material based solid state incandescent devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light emitting devices.

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