Nondestructive evaluation of carrier concentration in the channel layer of In0.5Ga0.5P/In0.2Ga0.8As/GaAs heterostructure field-effect transistors by Raman scattering

Gako Araki; Takumi Nittono; Tomofumi Furuta; Fumiaki Hyuga

doi:10.1063/1.121838

Nondestructive evaluation of carrier concentration in the channel layer of In0.5Ga0.5P/In0.2Ga0.8As/GaAs heterostructure field-effect transistors by Raman scattering

Applied Physics Letters ◽

10.1063/1.121838 ◽

1998 ◽

Vol 73 (3) ◽

pp. 372-374 ◽

Cited By ~ 7

Author(s):

Gako Araki ◽

Takumi Nittono ◽

Tomofumi Furuta ◽

Fumiaki Hyuga

Keyword(s):

Raman Scattering ◽

Nondestructive Evaluation ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Layer ◽

Heterostructure Field Effect Transistors

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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s00339-002-1760-6 ◽

2003 ◽

Vol 77 (5) ◽

pp. 669-671 ◽

Cited By ~ 12

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

S.L. Gu ◽

B. Shen ◽

...

Keyword(s):

Carrier Concentration ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

High Carrier Concentration ◽

Heterostructure Field Effect Transistors ◽

High Carrier ◽

Gan Heterostructure

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Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/8/085004 ◽

2010 ◽

Vol 25 (8) ◽

pp. 085004 ◽

Cited By ~ 11

Author(s):

A Sarua ◽

Hangfeng Ji ◽

J W Pomeroy ◽

M J Uren ◽

T Martin ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Piezoelectric Strain ◽

Gan Heterostructure

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Introducing a Surface-Enhanced-Raman-Scattering Enhancer for Experimental Estimation of the Debye Screening Length in Organic Field-Effect Transistors

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00148 ◽

2021 ◽

Author(s):

Hao Li ◽

Cong Wang ◽

Meihua Shou ◽

Yanrui Lin ◽

Xuehua Hou ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistors ◽

Debye Screening Length ◽

Organic Field Effect Transistors ◽

Debye Screening ◽

Screening Length ◽

Surface Enhanced ◽

Surface Enhanced Raman ◽

Enhanced Raman Scattering

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters ◽

10.1109/55.506356 ◽

1996 ◽

Vol 17 (7) ◽

pp. 325-327 ◽

Cited By ~ 138

Author(s):

M.A. Khan ◽

Q. Chen ◽

J.W. Yang ◽

M.S. Shur ◽

B.T. Dermott ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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