Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

1998 ◽  
Vol 72 (23) ◽  
pp. 2996-2998 ◽  
Author(s):  
R. B. Bergmann ◽  
C. Zaczek ◽  
N. Jensen ◽  
S. Oelting ◽  
J. H. Werner
1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 893-896 ◽  
Author(s):  
Ying Jia ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2001 ◽  
Vol 225 (2-4) ◽  
pp. 335-339 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Lars Oberbeck ◽  
Thomas A. Wagner

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2415-2418 ◽  
Author(s):  
Ichiro Mizushima ◽  
Mitsuo Koike ◽  
Tsutomu Sato ◽  
Kiyotaka Miyano ◽  
Yoshitaka Tsunashima

1998 ◽  
Vol 324 (1-2) ◽  
pp. 85-88 ◽  
Author(s):  
M.E Taylor ◽  
Harry A Atwater ◽  
M.V.Ramana Murty

2000 ◽  
Vol 209 (2-3) ◽  
pp. 335-338 ◽  
Author(s):  
Tatsuro Watahiki ◽  
Akira Yamada ◽  
Makoto Konagai

1986 ◽  
Author(s):  
T. Yamazaki ◽  
R. Sugino ◽  
T. Ito ◽  
H. Ishikawa

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