Electrical characterization of GaN/SiC n-p heterojunction diodes

1998 ◽  
Vol 72 (11) ◽  
pp. 1371-1373 ◽  
Author(s):  
John T. Torvik ◽  
Moeljanto Leksono ◽  
Jacques I. Pankove ◽  
Bart Van Zeghbroeck ◽  
Hock M. Ng ◽  
...  
2011 ◽  
Author(s):  
Kasturi V. Bangera ◽  
Gowrish K. Rao ◽  
G. K. Shivakumar ◽  
Abdul Manaf Hashim ◽  
Vijay K. Arora

1997 ◽  
Vol 175-176 ◽  
pp. 603-607 ◽  
Author(s):  
Michele Lazzeri ◽  
Vittorio Pellegrini ◽  
Fabio Beltram ◽  
Marco Lazzarino ◽  
Jens J. Paggel ◽  
...  

2001 ◽  
Vol 90 (11) ◽  
pp. 5763-5767 ◽  
Author(s):  
R. L. Hoffman ◽  
J. F. Wager ◽  
M. K. Jayaraj ◽  
J. Tate

2017 ◽  
Vol 12 (10) ◽  
pp. 1162-1166 ◽  
Author(s):  
H. Algarni ◽  
R. I. Badran ◽  
M. Ajmal Khan ◽  
Fredj Hassen ◽  
S. H. Kim ◽  
...  

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

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