Minority carrier lifetime in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

2018 ◽  
Vol 43 (2) ◽  
pp. 49-52 ◽  
Author(s):  
Naofumi Nishikawa ◽  
Satoshi Takeichi ◽  
Takanori Hanada ◽  
Shuya Tategami ◽  
Atsuhiko Fukuyama ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Composite Films ◽  
Minority Carrier Lifetime ◽  
Carbon Composite ◽  
Hydrogenated Amorphous Carbon ◽  
Ultrananocrystalline Diamond ◽  
Hydrogenated Amorphous

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

2010 ◽  
Vol 49 (3) ◽  
pp. 031302 ◽  
Author(s):  
Shinya Ohmagari ◽  
Tsuyoshi Yoshitake ◽  
Akira Nagano ◽  
Ryota Ohtani ◽  
Hiroyuki Setoyama ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Composite Films ◽  
Boron Doping ◽  
Carbon Composite ◽  
Hydrogenated Amorphous Carbon ◽  
Ultrananocrystalline Diamond ◽  
P Type ◽  
Hydrogenated Amorphous

Roles of boron in growth of diamond grains in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shinya Ohmagari ◽  
Yūki Katamune ◽  
Hikaru Ichinose ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Composite Films ◽  
Pulsed Laser ◽  
Carbon Composite ◽  
Laser Deposition ◽  
Hydrogenated Amorphous Carbon ◽  
Ultrananocrystalline Diamond ◽  
Hydrogenated Amorphous ◽  
Crystalline Growth

ABSTRACTBoron doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition were structurally investigated. With an increase in the boron content, the grain size was increased from 5 to 23 nm accompanying by the lattice constant approaching to that of bulk diamond. The near-edge X-ray absorption fine-structure revealed that boron atoms are preferentially distributed into grain boundaries. On the basis of the results, the roles of the boron atoms in the enhanced crystalline growth are discussed. We consider that the crystalline growth posterior to the nucleation is facilitated by boron atoms existing neighbor to UNCD grains or by boron-containing energetic species in plasma.

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