Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n+-type doped GaAs

1997 ◽  
Vol 71 (26) ◽  
pp. 3889-3891 ◽  
Author(s):  
K. M. Huang ◽  
K. L. Wang ◽  
D. P. Wang ◽  
K. F. Huang ◽  
T. C. Huang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Electroreflectance Spectroscopy

Many Band Effects in Cuprate Superconductors

1997 ◽  
Vol 11 (13) ◽  
pp. 585-592
Author(s):  
S. P. Kruchinin ◽  
A. M. Yaremko ◽  
E. V. Mozdor
Keyword(s):  
Experimental Data ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Theoretical Approach ◽  
Cuprate Superconductors ◽  
Electron Pair ◽  
Recent Experimental Data ◽  
Natural Manner ◽  
System A ◽  
Interacting Electrons

The new theoretical approach is proposed for study the states responsible for superconductivity of crystals. Within the frameworks of worked out approach it is shown that in electron–phonon system a class of new so-called coupled states arises. Postulated in BCS method electron-pair states k1 + k2 = 0, s + s′ = 0 are in natural manner included in this class. The model numerical calculations have shown that SC gap depends on number of bands crossing the Fermi level on the momenta k1+k2 = K≠ 0 of interacting electrons and that the temperature dependence of SC gap for HTSC is more complicated (in agreement with the recent experimental data) then predicted in BCS approach.

Temperature Dependence in $\bf In_{\ninmbi x}Ga_{1-{\ninmbi x}}As/GaAs$ Double Quantum Well by Contactless Electroreflectance Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6334-6339 ◽  
Author(s):  
Yan-Kuin Su ◽  
Hrong Kuan ◽  
Tien-Shou Wu ◽  
Ying-Sheng Huang ◽  
FengChuanLin
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Electroreflectance Spectroscopy

Photo-induced changes in the coefficient of the temperature dependence of the Fermi level in discharge-produced amorphous silicon

1982 ◽  
Vol 43 (9) ◽  
pp. 1419-1424 ◽  
Author(s):  
J. Bullot ◽  
M. Galin ◽  
M. Gauthier ◽  
B. Bourdon ◽  
Y. Catherine
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Induced Changes

scholarly journals Unusual temperature dependence of the spectral weight near the Fermi level of NdNiO3thin films

2012 ◽  
Vol 86 (19) ◽  
Author(s):  
E. F. Schwier ◽  
R. Scherwitzl ◽  
Z. Vydrovà ◽  
M. García-Fernández ◽  
M. Gibert ◽  
...  
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Spectral Weight

The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations

1994 ◽  
Vol 336 ◽  
Author(s):  
R.M.A. Dawson ◽  
C.M. Fortmann ◽  
Y.M. Li ◽  
C.R. Wronski
Keyword(s):  
High Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Elevated Temperatures ◽  
Free Carrier ◽  
Annealed State ◽  
Thermal Equilibration ◽  
Staebler Wronski Effect ◽  
Substrate Temperatures

ABSTRACTLight induced degradation of intrinsic Amorphous silicon (a-Si:H) is investigated as a function of temperature. Previous work described an equilibrium framework for the high temperature behavior of dangling bonds defects (DB) 11]; and the temperature dependence of the annealed state photo, σPH, and dark, σD, conductivities of a series of intrinsic a-Si:H Materials deposited over a range of substrate temperatures, 200°C < Ts < 380°C [2]. These results are extended to the light degraded state where elevated temperatures provide for equilibration of the free carrier and DB concentrations. For the equilibrium, light degraded state, both σD and σPH, decrease compared to the annealed state while the ratio, σD/σPH remains unchanged. Relationships between the ratio [DB+]/[DB] and the Fermi level are derived from the equilibrium framework.

Composition and temperature dependence of the density of states at the Fermi level in vanadium-based A-15 compound systems

Physica B+C ◽  
1983 ◽  
Vol 122 (1) ◽  
pp. 55-66 ◽  
Author(s):  
A. Gevers ◽  
T.O. Klaasen ◽  
N.J. Poulis ◽  
H.R. Khan ◽  
Ch.J. Raub
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Density Of States

Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems

1988 ◽  
Vol 53 (3) ◽  
pp. 210-212 ◽  
Author(s):  
Renyu Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Fermi Level Pinning
Sign in / Sign up

Export Citation Format

Share Document