Photo-induced changes in the coefficient of the temperature dependence of the Fermi level in discharge-produced amorphous silicon

1982 ◽  
Vol 43 (9) ◽  
pp. 1419-1424 ◽  
Author(s):  
J. Bullot ◽  
M. Galin ◽  
M. Gauthier ◽  
B. Bourdon ◽  
Y. Catherine
Keyword(s):  
Fermi Level ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Induced Changes

Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon

2012 ◽  
Vol 184 ◽  
pp. 416-421 ◽  
Author(s):  
H. Mizubayashi ◽  
I. Sakata ◽  
H. Tanimoto
Keyword(s):  
Internal Friction ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Distribution ◽  
Activation Energies ◽  
Mechanical Spectroscopy ◽  
Induced Changes ◽  
Mild Temperature ◽  
Hydrogenated Amorphous

For hydrogenated amorphous silicon (a-Si:H) films deposited at temperatures between 423 K and 623 K (a-Si:H423Kand so on), the light-induced changes in the internal friction between 80 K and 400 K were studied. The internal friction is associated with H2motion in microvoid networks, and shows the mild temperature dependence between about 80 K and 300 K (Q-180-300K) and the almost linear increase above 300 K (Q-1>300K). BothQ-180-300KandQ-1>300Kdecrease with increasing the deposition temperature, and show the mild temperature dependence ina-Si:H623K. The white light soaking with 100 mW/cm2(WLS100and so on) below 300 K caused a change inQ-180-300Kand no changes inQ-1>300K, respectively, and the light-induced changes inQ-180-300Krecovered after annealing at 423 K. The wide distribution of activation energies for H2motions between microvoids indicate that most of neighboring microvoids are connected through windows, i.e., the microvoid networks are existing ina-Si:H, and the spatially loose or solid structures are responsible for the low or high activation energies for the H2motion between microvoids, respectively. Furthermore, the light-induced hydrogen evolution (LIHE) was observed for WLS200to WLS400in a vacuum between 400 and 500 K, resulting in the disappearance of the internal friction due to the H2motion in the microvoid network.

The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations

1994 ◽  
Vol 336 ◽  
Author(s):  
R.M.A. Dawson ◽  
C.M. Fortmann ◽  
Y.M. Li ◽  
C.R. Wronski
Keyword(s):  
High Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Elevated Temperatures ◽  
Free Carrier ◽  
Annealed State ◽  
Thermal Equilibration ◽  
Staebler Wronski Effect ◽  
Substrate Temperatures

ABSTRACTLight induced degradation of intrinsic Amorphous silicon (a-Si:H) is investigated as a function of temperature. Previous work described an equilibrium framework for the high temperature behavior of dangling bonds defects (DB) 11]; and the temperature dependence of the annealed state photo, σPH, and dark, σD, conductivities of a series of intrinsic a-Si:H Materials deposited over a range of substrate temperatures, 200°C < Ts < 380°C [2]. These results are extended to the light degraded state where elevated temperatures provide for equilibration of the free carrier and DB concentrations. For the equilibrium, light degraded state, both σD and σPH, decrease compared to the annealed state while the ratio, σD/σPH remains unchanged. Relationships between the ratio [DB+]/[DB] and the Fermi level are derived from the equilibrium framework.

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
State Density ◽  
Charge Carriers ◽  
Band Tail ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Long Time ◽  
Tail Structure ◽  
Kinetics Of

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Many Band Effects in Cuprate Superconductors

1997 ◽  
Vol 11 (13) ◽  
pp. 585-592
Author(s):  
S. P. Kruchinin ◽  
A. M. Yaremko ◽  
E. V. Mozdor
Keyword(s):  
Experimental Data ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Theoretical Approach ◽  
Cuprate Superconductors ◽  
Electron Pair ◽  
Recent Experimental Data ◽  
Natural Manner ◽  
System A ◽  
Interacting Electrons

The new theoretical approach is proposed for study the states responsible for superconductivity of crystals. Within the frameworks of worked out approach it is shown that in electron–phonon system a class of new so-called coupled states arises. Postulated in BCS method electron-pair states k1 + k2 = 0, s + s′ = 0 are in natural manner included in this class. The model numerical calculations have shown that SC gap depends on number of bands crossing the Fermi level on the momenta k1+k2 = K≠ 0 of interacting electrons and that the temperature dependence of SC gap for HTSC is more complicated (in agreement with the recent experimental data) then predicted in BCS approach.

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