Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination

1997 ◽  
Vol 71 (25) ◽  
pp. 3670-3672 ◽  
Author(s):  
Koichiro Saga ◽  
Takeshi Hattori
Keyword(s):  
Silicon Wafer ◽  
Gate Oxide ◽  
Organic Contamination ◽  
Oxide Degradation

Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
D. Imafuku ◽  
W. Mizubayashi ◽  
S. Miyazaki ◽  
M. Hirose ◽  
Y. Wakayama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Degradation Mechanism ◽  
Gate Oxide ◽  
Contamination Level ◽  
Degradation Behavior ◽  
Clean Room ◽  
Organic Contamination ◽  
Organic Adsorbates ◽  
Wafer Surfaces ◽  
Dielectric Degradation

ABSTRACTOrganic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity

1997 ◽  
Vol 473 ◽  
Author(s):  
D. Imafuku ◽  
W. Mizubayashi ◽  
S. Miyazaki ◽  
M. Hirose ◽  
Y. Wakayama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Degradation Mechanism ◽  
Gate Oxide ◽  
Contamination Level ◽  
Degradation Behavior ◽  
Clean Room ◽  
Organic Contamination ◽  
Organic Adsorbates ◽  
Wafer Surfaces ◽  
Dielectric Degradation

ABSTRACTOrganic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Manufacturing Technique ◽  
Oxide Degradation

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging

Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

2022 ◽  
pp. 1-1
Author(s):  
Minghang Xie ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
Quanming Luo ◽  
Xiong Du
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Degradation Monitoring ◽  
Gate Charge

Temperature accelerated gate oxide degradation under plasma-induced charging

1996 ◽  
Vol 17 (6) ◽  
pp. 288-290 ◽  
Author(s):  
T. Brozek ◽  
Y.D. Chan ◽  
C.R. Viswanathan
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation

Ultrathin gate oxide degradation under different rates of charge injection

1999 ◽  
Author(s):  
Pitsini Mongkolkachit ◽  
Bharat L. Bhuva ◽  
Sharad Prasad ◽  
N. Bui ◽  
Sherra E. Kerns
Keyword(s):  
Charge Injection ◽  
Gate Oxide ◽  
Oxide Degradation

Simultaneous Analysis of Light and Heavy Organic Contamination on Silicon Wafer

2005 ◽  
Vol 103-104 ◽  
pp. 209-212
Author(s):  
Heini Ritala ◽  
Simo Eränen ◽  
Arto Kiviranta ◽  
Jaakko Räsänen ◽  
Virpi Tarkiainen ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Simultaneous Analysis ◽  
Organic Contamination

Effect of Electron Shading on Gate Oxide Degradation

1998 ◽  
Vol 37 (Part 1, No. 4B) ◽  
pp. 2321-2324 ◽  
Author(s):  
Shigenori Sakamori ◽  
Takahiro Maruyama ◽  
Nobuo Fujiwara ◽  
Hiroshi Miyatake
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation
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