SiO2 film thickness metrology by x-ray photoelectron spectroscopy

1997 ◽  
Vol 71 (19) ◽  
pp. 2764-2766 ◽  
Author(s):  
Z. H. Lu ◽  
J. P. McCaffrey ◽  
B. Brar ◽  
G. D. Wilk ◽  
R. M. Wallace ◽  
...  
2003 ◽  
Vol 83 (16) ◽  
pp. 3422-3424 ◽  
Author(s):  
K. Takahashi ◽  
H. Nohira ◽  
K. Hirose ◽  
T. Hattori

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


2009 ◽  
Vol 1174 ◽  
Author(s):  
Jong-Shin Wu ◽  
Che-Wei Hsu ◽  
Tsung-Chieh Cheng ◽  
Chun-Hui Yang ◽  
Yi-Ling Shen ◽  
...  

AbstractThe ZnO thin film was successfully deposited on a glass substrate at RT by a RF reactive magnetron sputtering method. Structural, chemical, optical, and hydrophilic/hydrophobic properties are measured by using a surface profilometer, an x-ray diffractometry (XRD), an x-ray photoelectron spectroscopy (XPS), a UV-VIS spectrophotometer, and a contact angle system, respectively. Results show that the deposition rate decreases with increasing O2/(Ar+O2) ratio. Otherwise, the best stoichiometric and quality of ZnO thin film was observed at 0.30 of O2/(Ar+O2) ratio by the smallest FWHM and the strong O-Zn bonds. Regardless of O2/(Ar+O2) ratio effect or thickness effect, high transmittance (> 86%) in the visible region is observed, while the UV-shielding characteristics depend upon both the magnitude of film thickness. The film thickness plays a more prominent role in controlling optical properties, especially in the UV-shielding characteristics, than the O2/(Ar+O2) ratio. However, the hydrophobic characteristics can be obtained when the glass coating with ZnO thin films. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, has good UV-shielding characteristics, and possesses highly hydrophobic characteristics (self-clean capability), which is highly suitable for applications in the glass industries.


Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 535 ◽  
Author(s):  
María-Dolores Avilés ◽  
Ramón Pamies ◽  
José Sanes ◽  
María-Dolores Bermúdez

Graphene (0.5 wt.%) was dispersed in the hydrophobic room-temperature ionic liquid 1-octyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (IL) to obtain a new non-Newtonian (IL + G) nanolubricant. Thin layers of IL and (IL + G) lubricants were deposited on stainless steel disks by spin coating. The tribological performance of the new thin layers was compared with those of full fluid lubricants. Friction coefficients for neat IL were independent of lubricant film thickness. In contrast, for (IL + G) the reduction of film thickness not only afforded 40% reduction of the friction coefficient, but also prevented wear and surface damage. Results of surface profilometry, scanning and transmission electron microscopy (SEM and TEM), energy dispersive analysis (EDX), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were discussed.


2006 ◽  
Vol 05 (04n05) ◽  
pp. 493-498
Author(s):  
C. L. HENG ◽  
Y. J. LI ◽  
J. MAYANDI ◽  
T. G. FINSTAD ◽  
S. JØRGENSEN ◽  
...  

We report the photoluminescence (PL) from an ( Er , Ge ) co-doped SiO 2 film deposited by rf-magnetron sputtering in an Ar + O 2 ambience. The sample film was annealed in N 2 for 30 min at different temperatures. The PL intensity increases as the annealing temperature increases from 700 to 1000°C, and drops to very weak after 1100°C annealing. High-resolution transmission electron microscopy (TEM) observation shows that there are some Ge -rich nanoparticles precipitated after 700°C annealing, and more clusters precipitated after 1000°C annealing. However, no Ge nanocrystals were found in these films, the diffraction patterns are always halo which indicates that the precipitated clusters are in amorphous states. X-ray photoelectron spectroscopy (XPS) analysis indicates the Ge in the nanoclusters is mostly in an oxidized state and the oxidation state of Er increases with increasing annealing temperature.


Sign in / Sign up

Export Citation Format

Share Document