Effect of substrate temperature and film thickness on the surface structure of some thin amorphous films of MoO3 studied by X-ray photoelectron spectroscopy (ESCA)

1989 ◽  
Vol 24 (9) ◽  
pp. 3087-3090 ◽  
Author(s):  
M. Anwar ◽  
C. A. Hogarth ◽  
R. Bulpett
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Surface Structure ◽  
Photoelectron Spectroscopy ◽  
Amorphous Films ◽  
X Ray

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Critical Laser Fluence Observed in (111) Texture, Grain Size and Mobility of Laser Crystallized Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
R.I. Johnson ◽  
G.B. Anderson ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
...  
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Fluence ◽  
Laser Energy ◽  
X Ray ◽  
Peak Intensity ◽  
Silicon Materials ◽  
The Relationship

This paper describes new results on the relationship between the grain size, mobility, and Si (111) x-ray peak intensity of laser crystallized amorphous silicon as a function of the laser fluence, shot density, substrate temperature, and film thickness. These observations include an unexpected narrow peak found in the silicon (111) x- ray peak intensity, which occurs at a specific laser fluence for a given film thickness and substrate temperature. Amorphous silicon materials processed at laser energy densities defined by this peak exhibit exceptionally large grain sizes and electron mobilities that cannot be obtained at any other energy and shot density combination above or below the energy at which the Si (111) x-ray peak intensity maximum occurs.

Surface Structure of Sulfur Coated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Shigeo Goto
Keyword(s):  
Electron Beam ◽  
Surface Structure ◽  
Chemical Bond ◽  
Photoelectron Spectroscopy ◽  
Strong Dependence ◽  
High Energy ◽  
Chemical Bonds ◽  
High Energy Electron ◽  
X Ray ◽  
Beam Diffraction

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

Investigation of Characteristics of Multi-Function ZnO Thin Film Deposited with Various Argon and Oxygen Ratios

2009 ◽  
Vol 1174 ◽  
Author(s):  
Jong-Shin Wu ◽  
Che-Wei Hsu ◽  
Tsung-Chieh Cheng ◽  
Chun-Hui Yang ◽  
Yi-Ling Shen ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Visible Region ◽  
Thickness Effect ◽  
Zno Thin Film ◽  
X Ray ◽  
Uv Shielding ◽  
Highly Hydrophobic

AbstractThe ZnO thin film was successfully deposited on a glass substrate at RT by a RF reactive magnetron sputtering method. Structural, chemical, optical, and hydrophilic/hydrophobic properties are measured by using a surface profilometer, an x-ray diffractometry (XRD), an x-ray photoelectron spectroscopy (XPS), a UV-VIS spectrophotometer, and a contact angle system, respectively. Results show that the deposition rate decreases with increasing O2/(Ar+O2) ratio. Otherwise, the best stoichiometric and quality of ZnO thin film was observed at 0.30 of O2/(Ar+O2) ratio by the smallest FWHM and the strong O-Zn bonds. Regardless of O2/(Ar+O2) ratio effect or thickness effect, high transmittance (> 86%) in the visible region is observed, while the UV-shielding characteristics depend upon both the magnitude of film thickness. The film thickness plays a more prominent role in controlling optical properties, especially in the UV-shielding characteristics, than the O2/(Ar+O2) ratio. However, the hydrophobic characteristics can be obtained when the glass coating with ZnO thin films. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, has good UV-shielding characteristics, and possesses highly hydrophobic characteristics (self-clean capability), which is highly suitable for applications in the glass industries.

Pulsed Laser Deposition of Metal Dichalcogenides on Stainless Steel

1990 ◽  
Vol 201 ◽  
Author(s):  
P. J. John ◽  
V. J. Dyhouse ◽  
N. T. McDevitt ◽  
A. Safriet ◽  
J. S. Zabinski ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Laser Raman ◽  
Crystalline Films ◽  
Metal Dichalcogenides ◽  
193 Nm

AbstractFilms of MoS2 have been successfully deposited on 440C stainless steel using an excimer laser. A comparison was made of films ablated with the laser operating at 193 nm and at 248 nm. The effects of substrate temperature were also studied. X-ray Photoelectron Spectroscopy (XPS) measurements indicated that the films were sulphur rich as compared to single crystal MoS2. Laser Raman measurements indicated that annealing was necessary to obtain crystalline films. All films exhibited coefficients of friction in the neighborhood of 0.03 in a dry nitrogen environment. Coefficients of friction in laboratory air were significantly higher.

scholarly journals X-Ray Photoemission Study of the Oxidation of Hafnium

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
A. R. Chourasia ◽  
J. L. Hickman ◽  
R. L. Miller ◽  
G. A. Nixon ◽  
M. A. Seabolt
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Chemical Reactivity ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
X Ray ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Photoemission Study ◽  
Substrate Temperatures

About 20 Å of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300∘C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600∘C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO2 at substrate temperature around 300∘C for the first type of samples and at substrate temperature greater than 550∘C for the second type.

Surface structure of human mucin using X-ray photoelectron spectroscopy

1998 ◽  
Vol 4 (4) ◽  
pp. 257-266 ◽  
Author(s):  
Bobby G. Russell ◽  
William E. Moddeman ◽  
Janine C. Birkbeck ◽  
Stephen E. Wright ◽  
David S. Millington ◽  
...  
Keyword(s):  
Surface Structure ◽  
Photoelectron Spectroscopy ◽  
X Ray
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