Refined calculations of effective attenuation lengths for SiO2 film thicknesses by x-ray photoelectron spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 252116 ◽  
Author(s):  
C. J. Powell ◽  
W. S. M. Werner ◽  
W. Smekal
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sio2 Film ◽  
X Ray

SiO2 film thickness metrology by x-ray photoelectron spectroscopy

1997 ◽  
Vol 71 (19) ◽  
pp. 2764-2766 ◽  
Author(s):  
Z. H. Lu ◽  
J. P. McCaffrey ◽  
B. Brar ◽  
G. D. Wilk ◽  
R. M. Wallace ◽  
...  
Keyword(s):  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Sio2 Film ◽  
X Ray

A STUDY ON THE PRECIPITATION OF Ge-RICH NANOPARTICLES IN A LUMINESCENT (Er, Ge) CO-DOPED SiO2 FILM SPUTTERED WITH Ar + O2 PLASMA

2006 ◽  
Vol 05 (04n05) ◽  
pp. 493-498
Author(s):  
C. L. HENG ◽  
Y. J. LI ◽  
J. MAYANDI ◽  
T. G. FINSTAD ◽  
S. JØRGENSEN ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Sio2 Film ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Diffraction Patterns ◽  
Amorphous States ◽  
Co Doped

We report the photoluminescence (PL) from an ( Er , Ge ) co-doped SiO 2 film deposited by rf-magnetron sputtering in an Ar + O 2 ambience. The sample film was annealed in N 2 for 30 min at different temperatures. The PL intensity increases as the annealing temperature increases from 700 to 1000°C, and drops to very weak after 1100°C annealing. High-resolution transmission electron microscopy (TEM) observation shows that there are some Ge -rich nanoparticles precipitated after 700°C annealing, and more clusters precipitated after 1000°C annealing. However, no Ge nanocrystals were found in these films, the diffraction patterns are always halo which indicates that the precipitated clusters are in amorphous states. X-ray photoelectron spectroscopy (XPS) analysis indicates the Ge in the nanoclusters is mostly in an oxidized state and the oxidation state of Er increases with increasing annealing temperature.

Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy

2003 ◽  
Vol 83 (16) ◽  
pp. 3422-3424 ◽  
Author(s):  
K. Takahashi ◽  
H. Nohira ◽  
K. Hirose ◽  
T. Hattori
Keyword(s):  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Accurate Determination ◽  
Sio2 Film ◽  
X Ray

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger
Keyword(s):  
Photoelectron Spectroscopy ◽  
Two Dimensional ◽  
X Ray

BONDS IN AMORPHOUS Nb1-xSixSTUDIED BY X-RAY EMISSION AND X-RAY PHOTOELECTRON SPECTROSCOPY

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1025-C9-1028 ◽  
Author(s):  
W. ZAHOROWSKI ◽  
A. SIMUNEK ◽  
G. WIECH ◽  
K. SÖLDNER ◽  
R. KNAUF ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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