Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device

1997 ◽  
Vol 71 (5) ◽  
pp. 647-649 ◽  
Author(s):  
Daniel X. Zhu ◽  
Serge Dubovitsky ◽  
William H. Steier ◽  
Johan Burger ◽  
Denis Tishinin ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Well ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Multiple Quantum

Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well

1998 ◽  
Vol 83 (1) ◽  
pp. 306-309 ◽  
Author(s):  
R. Mottahedeh ◽  
D. Prescott ◽  
S. K. Haywood ◽  
D. A. Pattison ◽  
P. N. Kean ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Effects of Strain-Induced Defects on Excess Carrier Lifetime and Ambipolar Diffusion in nipi-Doped In0.2Ga0.8As/GaAs Mqws

1995 ◽  
Vol 379 ◽  
Author(s):  
H.T. Lin ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Carrier Density ◽  
Carrier Transport ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Structural Defects ◽  
Multiple Quantum ◽  
Coulombic Interaction ◽  
Excess Carrier ◽  
Induced Defects

ABSTRACTThe effects of strain-induced defects on excess carrier lifetime and transport in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure were examined with a new method called electron beam-induced absorption modulation (EBIA) in which the kinetics of carrier transport and recombination are examined with a high-spatial, -spectral and -temporal resolution. The excess carrier lifetime and ambipolar diffusion were found to be reduced by factors of ∼1013 and ∼103 compared to theoretical values, respectively, and this is attributed to the presence of strain-induced defects. The MQW excitonic absorption coefficient sensitively depends on the carrier density in the QWs, as a result of screening of the electron-hole (e-h) Coulombic interaction. Likewise, ambipolar diffusion is found to depend on the excess carrier density in a nonlinear fashion, as a result of the e-h plasma-induced changes in the local depletion widths in the vicinity of structural defects.

Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple‐quantum‐well lasers

1996 ◽  
Vol 69 (21) ◽  
pp. 3158-3160 ◽  
Author(s):  
K. Czotscher ◽  
S. Weisser ◽  
E. C. Larkins ◽  
J. Fleissner ◽  
J. D. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm

2002 ◽  
Vol 41 (Part 2, No. 10B) ◽  
pp. L1146-L1148 ◽  
Author(s):  
Maxim Shatalov ◽  
Ashay Chitnis ◽  
Alexey Koudymov ◽  
Jianping Zhang ◽  
Vinod Adivarahan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Carrier Lifetime ◽  
Uv Light ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Uv

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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