Excess carrier lifetime and ambipolar diffusion anisotropy in a nipi‐doped In0.2Ga0.8As/GaAs multiple‐quantum‐well structure

1996 ◽  
Vol 79 (9) ◽  
pp. 7014-7020 ◽  
Author(s):  
H. T. Lin ◽  
D. H. Rich ◽  
A. Larsson
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Multiple Quantum ◽  
Diffusion Anisotropy ◽  
Excess Carrier ◽  
Quantum Well Structure

Effects of Strain-Induced Defects on Excess Carrier Lifetime and Ambipolar Diffusion in nipi-Doped In0.2Ga0.8As/GaAs Mqws

1995 ◽  
Vol 379 ◽  
Author(s):  
H.T. Lin ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Carrier Density ◽  
Carrier Transport ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Structural Defects ◽  
Multiple Quantum ◽  
Coulombic Interaction ◽  
Excess Carrier ◽  
Induced Defects

ABSTRACTThe effects of strain-induced defects on excess carrier lifetime and transport in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure were examined with a new method called electron beam-induced absorption modulation (EBIA) in which the kinetics of carrier transport and recombination are examined with a high-spatial, -spectral and -temporal resolution. The excess carrier lifetime and ambipolar diffusion were found to be reduced by factors of ∼1013 and ∼103 compared to theoretical values, respectively, and this is attributed to the presence of strain-induced defects. The MQW excitonic absorption coefficient sensitively depends on the carrier density in the QWs, as a result of screening of the electron-hole (e-h) Coulombic interaction. Likewise, ambipolar diffusion is found to depend on the excess carrier density in a nonlinear fashion, as a result of the e-h plasma-induced changes in the local depletion widths in the vicinity of structural defects.

Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device

1997 ◽  
Vol 71 (5) ◽  
pp. 647-649 ◽  
Author(s):  
Daniel X. Zhu ◽  
Serge Dubovitsky ◽  
William H. Steier ◽  
Johan Burger ◽  
Denis Tishinin ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Well ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Ambipolar Diffusion ◽  
Multiple Quantum

Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Far Infrared ◽  
Multiple Quantum ◽  
Infrared Reflectivity ◽  
Quantum Well Structure

Spin-Flip Raman Studies of a ZnSe / Zn1-xMnxSe Multiple Quantum Well Structure

1995 ◽  
Vol 182-184 ◽  
pp. 455-458 ◽  
Author(s):  
P.J. Boyce ◽  
D. Wolverson ◽  
J.J. Davies ◽  
W. Heimbrodt
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Spin Flip
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