Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple‐quantum‐well lasers

1996 ◽  
Vol 69 (21) ◽  
pp. 3158-3160 ◽  
Author(s):  
K. Czotscher ◽  
S. Weisser ◽  
E. C. Larkins ◽  
J. Fleissner ◽  
J. D. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Recombination mechanisms in photopumped Zn1−xCdxSe/ZnSe multiple quantum well lasers

1995 ◽  
Vol 150 ◽  
pp. 712-717 ◽  
Author(s):  
L. Calcagnile ◽  
M. Di Dio, ◽  
M. Lomascolo ◽  
R. Rinaldi ◽  
P. Prete ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um

1997 ◽  
Author(s):  
Alexei N. Baranov ◽  
Y. Cuminal ◽  
N. Bertru ◽  
Claude L. Alibert ◽  
Andre F. Joullie
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

2000 ◽  
Vol 15 (12) ◽  
pp. 1131-1140 ◽  
Author(s):  
L V Asryan ◽  
N A Gun'ko ◽  
A S Polkovnikov ◽  
G G Zegrya ◽  
R A Suris ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum
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