Quantum confinement in amorphous silicon layers

1997 ◽  
Vol 71 (9) ◽  
pp. 1189-1191 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement

Charge Retention in Single Silicon Nanocrystal Layers

2002 ◽  
Vol 737 ◽  
Author(s):  
Rishikesh Krishnan ◽  
Todd D. Krauss ◽  
Philippe M. Fauchet
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Growth Direction ◽  
Scanning Transmission Electron Microscope ◽  
Amorphous Silicon Dioxide ◽  
Si Nanocrystals ◽  
Scanning Transmission ◽  
Non Volatile Memory ◽  
Electric Force Microscopy

ABSTRACTSilicon (Si) nanocrystals formed by controlled thermal crystallization of amorphous silicon dioxide (a-SiO2)/amorphous silicon (a-Si)/amorphous silicon dioxide (a-SiO2) layers hold considerable promise for application in non-volatile memory products and optoelectronic devices. The size of the nanocrystals is fixed by the thickness of the Si layer and strong quantum confinement is provided in the vertical (growth) direction by the insulating a-SiO2 layers. However, the extent of quantum confinement in the lateral dimensions remains to be established. Electron energy loss spectroscopy (EELS) measurements performed within a scanning transmission electron microscope (STEM) indicate that the nanocrystals are laterally isolated by approximately 2nm of a-SiO2. The confinement potential provided by this barrier is insufficient to localize carriers within a nanocrystal for prolonged durations and can permit quantum mechanical tunneling via wave function overlap between adjacent nanocrystals. Charge leakage kinetics within a sheet of Si nanocrystals was studied using electric force microscopy. Approximately 750 electrons were injected within a 100nm radius circular patch with an atomic force microscope cantilever. The entire charge dissipated from this area in 70min via lateral conduction routes. With a goal of localizing the injected charge and enhancing its retention time, the samples were subjected to relatively low temperature dry oxidation at 750°C. After 20 min of oxidation, retention times above 400 minutes were observed.

Spatial versus quantum confinement in porous amorphous silicon nanostructures

1999 ◽  
Vol 8 (2) ◽  
pp. 179-193 ◽  
Author(s):  
R.B. Wehrspohn ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
I. Solomon
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures

Preparation of Amorphous Silicon Carbide Nanostructures via Solvothermal Method

2014 ◽  
Vol 597 ◽  
pp. 49-52
Author(s):  
Huan Xiang Li ◽  
Gong Yi Li ◽  
Tian Jiao Hu ◽  
Xiao Dong Li ◽  
Yun Quan Yang
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Trace Amount ◽  
Quantum Confinement ◽  
Solvothermal Method ◽  
Excitation Wavelength ◽  
Confinement Effects ◽  
Amorphous Silicon Carbide ◽  
Quantum Confinement Effects

A solvothermal method was developed to synthesize silicon carbide nanoflakes and nanowires through pyrolysis of polymethylsilane (PMS) at 550 °C in solution. Evidences from HRTEM, SAED, FTIR and XPS indicated that the products were amorphous nanostructures which mainly consisted of Si, C elements and trace amount O element. Owing to concrete quantum confinement effects, the unique nanostructures have strong photoluminescence centered at 410-430 nm under excitation wavelength of 350 nm

Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

2001 ◽  
Vol 86 (7) ◽  
pp. 1355-1357 ◽  
Author(s):  
Nae-Man Park ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

Quantum Confinement in Single Layer a-Si:H Films

1996 ◽  
Vol 420 ◽  
Author(s):  
S. A. Koehler ◽  
H. Fritzsche
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Transmission Spectrum ◽  
Coherence Length ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Layer ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Careful Investigation

AbstractQuantum confinement effects in the transmission spectrum of thin amorphous silicon, a-Si:H, films require a coherence length comparable to the film thickness, as well as good film homogeneity. After a careful investigation, we conclude that there is no quantum confinement in single layer a-Si:H films at room temperature.

scholarly journals The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

2015 ◽  
Vol 27 (48) ◽  
pp. 8011-8016 ◽  
Author(s):  
Sadegh Askari ◽  
Vladmir Svrcek ◽  
Paul Maguire ◽  
Davide Mariotti
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

Quantum Confinement of Localized Excitons in Amorphous Silicon Nanostructures

2002 ◽  
Vol 190 (3) ◽  
pp. 769-773 ◽  
Author(s):  
Y. Kanemitsu ◽  
S. Nihonyanagi ◽  
Y. Fukunishi ◽  
T. Kushida
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Localized Excitons

scholarly journals Quantum confinement and band offsets in amorphous silicon quantum wells

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
K. Jarolimek ◽  
R. A. de Groot ◽  
G. A. de Wijs ◽  
M. Zeman
Keyword(s):  
Quantum Wells ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Band Offsets
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