scholarly journals Quantum confinement and band offsets in amorphous silicon quantum wells

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
K. Jarolimek ◽  
R. A. de Groot ◽  
G. A. de Wijs ◽  
M. Zeman
Keyword(s):  
Quantum Wells ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Band Offsets

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Band offsets of InXGa1−XN/GaN quantum wells reestimated

2007 ◽  
Vol 515 (10) ◽  
pp. 4488-4491 ◽  
Author(s):  
Dipankar Biswas ◽  
Subindu Kumar ◽  
Tapas Das
Keyword(s):  
Quantum Wells ◽  
Band Offsets

Reconfirmation of the band offsets of InGaP/GaAs quantum wells

2010 ◽  
Vol 42 (8) ◽  
pp. 2131-2133 ◽  
Author(s):  
Sanjib Kabi ◽  
Tapas Das ◽  
Dipankar Biswas
Keyword(s):  
Quantum Wells ◽  
Band Offsets

Dependence of Band Offsets on Elastic Strain in GaAs/GaAs1-xPxStrained-Layer Single Quantum Wells

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1631-L1634 ◽  
Author(s):  
Xiong Zhang ◽  
Kentaro Onabe ◽  
Yoshiki Nitta ◽  
Baoping Zhang ◽  
Susumu Fukatsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Elastic Strain ◽  
Single Quantum ◽  
Band Offsets

scholarly journals Band alignment in quantum wells from automatically tuned DFT+U

2019 ◽  
Vol 21 (11) ◽  
pp. 5966-5973 ◽  
Author(s):  
Grigory Kolesov ◽  
Chungwei Lin ◽  
Andrew Knyazev ◽  
Keisuke Kojima ◽  
Joseph Katz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Bulk Properties ◽  
Band Offsets ◽  
Zinc Blende

Accurate band offsets in III–V zinc blende-alloy quantum wells were obtained computationally with the DFT+U method automatically tuned to reproduce bulk properties.

scholarly journals Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
K. Jarolimek ◽  
E. Hazrati ◽  
R. A. de Groot ◽  
G. A. de Wijs
Keyword(s):  
Amorphous Silicon ◽  
First Principles ◽  
Band Offsets
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