Spatial versus quantum confinement in porous amorphous silicon nanostructures

1999 ◽  
Vol 8 (2) ◽  
pp. 179-193 ◽  
Author(s):  
R.B. Wehrspohn ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
I. Solomon
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures

Quantum Confinement of Localized Excitons in Amorphous Silicon Nanostructures

2002 ◽  
Vol 190 (3) ◽  
pp. 769-773 ◽  
Author(s):  
Y. Kanemitsu ◽  
S. Nihonyanagi ◽  
Y. Fukunishi ◽  
T. Kushida
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Localized Excitons

Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Komoda ◽  
J.P. Kelly ◽  
A. Nejm ◽  
K.P. Homewood ◽  
P.L.F Hemment ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Two Phase ◽  
Population Distributions ◽  
Si Nanocrystals ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Si Ion Implantation

ABSTRACTImplantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in order to modify the size and population distributions of the Si inclusions. Photoluminescence spectra have been recorded from samples annealed in nitrogen, forming gas and oxygen. Both red and blue shifts of the luminescence peaks have been observed. It is concluded that the photoluminescence is a consequence of the effects of quantum confinement but is also dependent on the presence of irradiation-induced defects or Si/SiO2 interface states.

Charge Retention in Single Silicon Nanocrystal Layers

2002 ◽  
Vol 737 ◽  
Author(s):  
Rishikesh Krishnan ◽  
Todd D. Krauss ◽  
Philippe M. Fauchet
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Growth Direction ◽  
Scanning Transmission Electron Microscope ◽  
Amorphous Silicon Dioxide ◽  
Si Nanocrystals ◽  
Scanning Transmission ◽  
Non Volatile Memory ◽  
Electric Force Microscopy

ABSTRACTSilicon (Si) nanocrystals formed by controlled thermal crystallization of amorphous silicon dioxide (a-SiO2)/amorphous silicon (a-Si)/amorphous silicon dioxide (a-SiO2) layers hold considerable promise for application in non-volatile memory products and optoelectronic devices. The size of the nanocrystals is fixed by the thickness of the Si layer and strong quantum confinement is provided in the vertical (growth) direction by the insulating a-SiO2 layers. However, the extent of quantum confinement in the lateral dimensions remains to be established. Electron energy loss spectroscopy (EELS) measurements performed within a scanning transmission electron microscope (STEM) indicate that the nanocrystals are laterally isolated by approximately 2nm of a-SiO2. The confinement potential provided by this barrier is insufficient to localize carriers within a nanocrystal for prolonged durations and can permit quantum mechanical tunneling via wave function overlap between adjacent nanocrystals. Charge leakage kinetics within a sheet of Si nanocrystals was studied using electric force microscopy. Approximately 750 electrons were injected within a 100nm radius circular patch with an atomic force microscope cantilever. The entire charge dissipated from this area in 70min via lateral conduction routes. With a goal of localizing the injected charge and enhancing its retention time, the samples were subjected to relatively low temperature dry oxidation at 750°C. After 20 min of oxidation, retention times above 400 minutes were observed.

SIMPLE QUANTUM CONFINEMENT THEORY FOR EXCITON IN INDIRECT GAP NANOSTRUCTURES

2000 ◽  
Vol 14 (15) ◽  
pp. 1559-1566 ◽  
Author(s):  
NGUYEN THI VAN OANH ◽  
NGUYEN AI VIET
Keyword(s):  
Optical Properties ◽  
Simple Model ◽  
Quantum Confinement ◽  
Tight Binding ◽  
Blue Shift ◽  
Analytic Solutions ◽  
Silicon Nanostructures ◽  
Tight Binding Approximation ◽  
Mass Approximation ◽  
Simple Quantum

We propose in this work a simple quantum confinement theory for excitons based on the effective mass approximation, for investigation of optical properties of indirect gap nanostructures. We show that using this simple model, we can get the analytic solutions and reobtain the main tight-binding approximation numerical results of Hill et al.1 for silicon nanostructures: blue shift of band gap and increase overlap between the states at the band edges when the nanostructures size in decreased.

Quantum confinement in amorphous silicon layers

1997 ◽  
Vol 71 (9) ◽  
pp. 1189-1191 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement

Quantum confinement effects in the soft X-ray fluorescence spectra of porous silicon nanostructures

1996 ◽  
Vol 97 (7) ◽  
pp. 549-552 ◽  
Author(s):  
S Eisebitt ◽  
J Lüning ◽  
J.-E Rubensson ◽  
T van Buuren ◽  
S.N Patitsas ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Fluorescence Spectra ◽  
Silicon Nanostructures ◽  
Confinement Effects ◽  
X Ray ◽  
Quantum Confinement Effects
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