Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

1997 ◽  
Vol 71 (4) ◽  
pp. 500-502 ◽  
Author(s):  
W. S. Lau ◽  
L. Zhong ◽  
Allen Lee ◽  
C. H. See ◽  
Taejoon Han ◽  
...  
2006 ◽  
Vol 917 ◽  
Author(s):  
Wai Shing Lau ◽  
Kum Fai Wong ◽  
Taejoon Han ◽  
N. P. Sandler

AbstractPreviously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.


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