Growth and characterization of InSbBi for long wavelength infrared photodetectors

1997 ◽  
Vol 70 (24) ◽  
pp. 3266-3268 ◽  
Author(s):  
J. J. Lee ◽  
J. D. Kim ◽  
M. Razeghi
Keyword(s):  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Long Wavelength Infrared

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

InGaAs-Capped InAs–GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

2009 ◽  
Vol 21 (18) ◽  
pp. 1332-1334 ◽  
Author(s):  
Wei-Hsun Lin ◽  
Chi-Che Tseng ◽  
Kuang-Ping Chao ◽  
Shu-Cheng Mai ◽  
Shih-Yen Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Infrared Range ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot ◽  
Long Wavelength Infrared

Chemical Design and Structural Chemistry of Lwir Optical Materials

1990 ◽  
Vol 216 ◽  
Author(s):  
C.K. Lowe-Ma ◽  
D.O. Kipp ◽  
T.A. Vanderah
Keyword(s):  
Crystal Structure ◽  
Electronic Configuration ◽  
Structure Type ◽  
Optical Transparency ◽  
Structure Property ◽  
Long Wavelength ◽  
Structure Property Relationships ◽  
New Compounds ◽  
Long Wavelength Infrared

ABSTRACTSome applications for long-wavelength infrared (LWIR) windows require environmental durability and mechanical strength in addition to infrared optical transparency; i.e., the windows must simultaneously serve as optical and as structural ceramics. The requirement of optical transparency at long IR wavelengths eliminates from consideration all ceramics based on oxides and other light-anion compounds, making this a particularly difficult materials problem. The structure-property relationships and chemical rationale used to guide both the screening of known compounds and the synthesis of new compounds likely to possess the desired properties rely on factors such as atomic mass, electronic configuration, coordination number, and crystal structure type.Our research has included the directed synthesis and characterization of a number of ternary indium sulfides as well as ternary calcium yttrium sulfides. Ternary indium sulfides feature both tetrahedral and octahedral coordination of indium. The crystal structure of KInS2 and its relationship to structures observed in other systems such as AIn2S4, A = Ca,Sr,Ba, is described. The crystal structure of CaY2S4 along with studies of yttrium-doped CaS are also described. The AIn2S4 compounds are more fully described in references [1] and [2].

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