On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals

1997 ◽  
Vol 70 (17) ◽  
pp. 2250-2252 ◽  
Author(s):  
Talid Sinno ◽  
Robert A. Brown ◽  
Wilfried von Ammon ◽  
Erich Dornberger
Keyword(s):  
Stacking Fault ◽  
Czochralski Silicon ◽  
Silicon Crystals

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

1997 ◽  
Vol 180 (3-4) ◽  
pp. 343-352 ◽  
Author(s):  
E. Dornberger ◽  
D. Gräf ◽  
M. Suhren ◽  
U. Lambert ◽  
P. Wagner ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Silicon Crystals

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

1983 ◽  
Vol 43 (3) ◽  
pp. 241-243 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Recombination Centers

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Control of carbon in Czochralski silicon crystals

1983 ◽  
Vol 63 (1) ◽  
pp. 219-221 ◽  
Author(s):  
R.W. Series ◽  
K.G. Barraclough
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals

Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals

1996 ◽  
Vol 35 (Part 1, No. 2A) ◽  
pp. 520-525 ◽  
Author(s):  
Jaroslaw Jablonski ◽  
Mina Saito ◽  
Yoshiji Miyamura ◽  
Masato Imai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Fe Impurities
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