Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

1997 ◽  
Vol 70 (8) ◽  
pp. 990-992 ◽  
Author(s):  
Q. Z. Liu ◽  
L. Shen ◽  
K. V. Smith ◽  
C. W. Tu ◽  
E. T. Yu ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force

Reflection High Energy Electron Diffraction and Atomic Force Microscopy Studies of MnxSc(1-x) Alloys Grown on MgO(001) Substrates by Molecular Beam Epitaxy

2011 ◽  
Vol 1295 ◽  
Author(s):  
Costel Constantin ◽  
Abhijit Chinchore ◽  
Arthur R. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method

ABSTRACTThe combination of the molecular beam epitaxy growth method with the in-situ reflection high energy electron diffraction measurements currently offers unprecedented control of crystalline growth materials. We present here a stoichiometric study of MnxSc(1-x) [x = 0, 0.03, 0.05, 0.15, 0.25, 0.35, and 0.50] thin films grown on MgO(001) substrates with this growth method. Reflection high energy electron diffraction and atomic force microscopy measurements reveal alloy behavior for all of our samples. In addition, we found that samples Mn0.10Sc0.90 and Mn0.50Sc0.50 display surface self-assembled nanowires with a length/width ratio of ~ 800 – 2000.

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