X‐ray photoelectron spectroscopy of carbon nitride films deposited by graphite laser ablation in a nitrogen postdischarge

1996 ◽  
Vol 69 (12) ◽  
pp. 1698-1700 ◽  
Author(s):  
Malek Tabbal ◽  
Philippe Mérel ◽  
Simona Moisa ◽  
Mohamed Chaker ◽  
André Ricard ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray

scholarly journals Low-Temperature Synthesis of Solution Processable Carbon Nitride Polymers

Molecules ◽  
2021 ◽  
Vol 26 (6) ◽  
pp. 1646
Author(s):  
Junyi Li ◽  
Neeta Karjule ◽  
Jiani Qin ◽  
Ying Wang ◽  
Jesús Barrio ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Spatial Organization ◽  
Surface Display ◽  
Liquid Media ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
X Ray ◽  
N2 Atmosphere ◽  
Carbon Nitride Materials

Carbon nitride materials require high temperatures (>500 °C) for their preparation, which entails substantial energy consumption. Furthermore, the high reaction temperature limits the materials’ processability and the control over their elemental composition. Therefore, alternative synthetic pathways that operate under milder conditions are still very much sought after. In this work, we prepared semiconductive carbon nitride (CN) polymers at low temperatures (300 °C) by carrying out the thermal condensation of triaminopyrimidine and acetoguanamine under a N2 atmosphere. These molecules are isomers: they display the same chemical formula but a different spatial distribution of their elements. X-ray photoelectron spectroscopy (XPS) experiments and electrochemical and photophysical characterization confirm that the initial spatial organization strongly determines the chemical composition and electronic structure of the materials, which, thanks to the preservation of functional groups in their surface, display excellent processability in liquid media.

X-ray emission and absorption spectra of carbon nitride films prepared by laser ablation

1999 ◽  
Vol 28 (6) ◽  
pp. 509-514 ◽  
Author(s):  
H. Izumi ◽  
T. Kaneyoshi ◽  
T. Ishihara ◽  
H. Yoshioka ◽  
H. Matsui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Absorption Spectra ◽  
Carbon Nitride ◽  
X Ray ◽  
Emission And Absorption Spectra

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

X-ray photoelectron spectroscopy study of carbon nitride films

2000 ◽  
Vol 125 (1-3) ◽  
pp. 313-316 ◽  
Author(s):  
V. Krastev ◽  
P. Petrov ◽  
D. Dimitrov ◽  
G. Beshkov ◽  
Ch. Georgiev ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Spectroscopy Study ◽  
X Ray

Effect of Gaseous Medium Pressure on Plasmadynamic Synthesis Product in the C-N System with Melamine

2014 ◽  
Vol 1040 ◽  
pp. 813-818 ◽  
Author(s):  
I.I. Shanenkov ◽  
Artur A. Sivkov ◽  
А.Ya. Pak ◽  
Yu.L. Kolganova
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Gaseous Medium ◽  
Morphological Changes ◽  
Nitrogen Pressure ◽  
Synthesis Product ◽  
X Ray Diffraction ◽  
Capacitive Energy Storage ◽  
X Ray ◽  
Transmission Electron

The possibility of plasmodynamic synthesis in the carbon-nitrogen system when using melamine as a precursor is described in the paper. The system based on the capacitive energy storage, which allows simultaneously powering the two opposite-directed coaxial magnetoplasma accelerators, is developed. The effect of gaseous medium in the processing chamber of the system on the synthesis product is investigated by applying such techniques as X-ray diffraction analysis (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). It is demonstrated that an increase in nitrogen pressure results in the structural and morphological changes in the synthesized sample, which might be caused by the increased carbon nitride yield and a great number of the appearing C-N bonds.

Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Laser Wavelength ◽  
Nitrogen Atmosphere ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
Krf Excimer Laser

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

2005 ◽  
Vol 480-481 ◽  
pp. 71-76 ◽  
Author(s):  
Jin Chun Jiang ◽  
Wen Juan Cheng ◽  
Yang Zhang ◽  
He Sun Zhu ◽  
De Zhong Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

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