scholarly journals X-Ray Photoelectron Spectroscopy and Raman Spectroscopy Studies on Thin Carbon Nitride Films Deposited by Reactive RF Magnetron Sputtering

2012 ◽  
Vol 02 (02) ◽  
pp. 92-102 ◽  
Author(s):  
Masao Matsuoka ◽  
Sadao Isotani ◽  
Ronaldo D. Mansano ◽  
Wilmer Sucasaire ◽  
Ricardo A. C. Pinto ◽  
...  
Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 272 ◽  
Author(s):  
Todor Vuchkov ◽  
Talha Bin Yaqub ◽  
Manuel Evaristo ◽  
Albano Cavaleiro

Carbon-alloyed transition metal dichalcogenide (TMD) coatings have great potential for providing a good tribological response in diverse operating environments. There are different ways to synthesize these coatings by magnetron sputtering, with no clear indication of the best possible route for potential upscaling. In this study, tungsten-sulfur-carbon (W-S-C) coatings were deposited by radio frequency (RF) magnetron sputtering via four different methods. All coatings were sub-stoichiometric in terms of the S/W ratio, with the bombardment of the growing film with backscattered Ar neutrals being the main mechanism governing the S/W ratio. The crystallinity of the films was dependent on the C and S contents. X-ray photoelectron spectroscopy (XPS) revealed W-S and W-C bonding in all coatings. Raman spectroscopy showed the presence of an a-C phase with predominant sp2 bonding. The hardness of the coatings may be related to the C content and the S/W ratio. A friction coefficient of 0.06–0.08 was achieved during sliding in ambient air by the coatings deposited in non-reactive mode with optimal C contents. The results indicate that sputtering in non-reactive mode should be the method of choice for synthesis of these coatings.


2011 ◽  
Vol 492 ◽  
pp. 80-84
Author(s):  
Jun Liu ◽  
Zhi Gang Chen ◽  
Kai Bi ◽  
Yue Min Wang

CNx films were deposited on YG8 carbide alloy (WC+8%Co) substrates by DC or RF magnetron sputtering. The composition, bonding state, adhesion, and tribological behavior of CNx films were researched. X-ray Photoelectron spectroscopy results showed that C-N, C=N and C≡N bond existed in CNx films. RF magnetron sputtering is in favor of the bonding of C and N, the adhesion and the wear resistance of CNx films. DC magnetron sputtering is in favor of lubricating ability of CNx films. Substrate bias has some effect on the bonding of C and N, the adhesion of the films, decrease of adhesive wear and the friction coefficient of films.


2015 ◽  
Vol 1131 ◽  
pp. 8-11 ◽  
Author(s):  
Thitikorn Boonkoom ◽  
Kittipong Tantisantisom ◽  
Jedsada Manyam

We examined structural properties of nitrogen doped (ZnO:N) thin films prepared by reactive RF magnetron sputtering technique in conjunction with gas timing method. The deposited films were polycrystalline ZnO in wurtzite structure. Morphology of the ZnO:N films could be modified by adjusting gas timing conditions. The x-ray photoelectron spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) analysis showed that incorporation of nitrogen may cause structural distortion in the ZnO:N crystal.


2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.


2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.


2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.


2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.


2010 ◽  
Vol 654-656 ◽  
pp. 1748-1751
Author(s):  
Yang Ping Li ◽  
Zheng Tang Liu ◽  
Feng Yan ◽  
Wen Ting Liu

Germanium carbon films were prepared on ZnS substrates by reactive RF magnetron sput- tering of a Ge target in Ar and CH4 mixtures for IR antireflective and protective purposes. IR transmit- ttance spectra of the specimens were measured, with which H content in the films was investigated. The C and Ge contents and the atomic binding state were studied by X-ray photoelectron spectroscopy. The results show that H involved in the films combine mainly with C at low substrate temperatures. IR absorption peaks caused by the C-H bonds decrease with increasing temperature, indicating the drop of the C-H bonds content in the film. At relatively low temperature the film is high in C content and low in refractive index; at high temperature the film is low in C content and high in refractive index. Both C-Ge and C-C bonds exist in the film and O impurity combines mainly with Ge.


2002 ◽  
Vol 193 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
Liudi Jiang ◽  
A.G Fitzgerald ◽  
M.J Rose ◽  
R Cheung ◽  
B Rong ◽  
...  

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