Evidence of interface trap creation by hot‐electrons in AlGaAs/GaAs high electron mobility transistors

1996 ◽  
Vol 69 (10) ◽  
pp. 1411-1413 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Alessandro Paccagnella ◽  
Youcef Haddab ◽  
Claudio Canali ◽  
Enrico Zanoni
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Hot Electrons ◽  
Interface Trap ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

2015 ◽  
Vol 106 (21) ◽  
pp. 213502 ◽  
Author(s):  
Tommaso Brazzini ◽  
Michael A. Casbon ◽  
Huarui Sun ◽  
Michael J. Uren ◽  
Jonathan Lees ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Hot Electrons ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

2012 ◽  
Vol 100 (23) ◽  
pp. 233508 ◽  
Author(s):  
Matteo Meneghini ◽  
Antonio Stocco ◽  
Riccardo Silvestri ◽  
Gaudenzio Meneghesso ◽  
Enrico Zanoni
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Hot Electrons ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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