AlGaAs/GaAs light‐emitting diode on a Si substrate with a self‐formed GaAs islands active region grown by droplet epitaxy

1996 ◽  
Vol 68 (4) ◽  
pp. 523-525 ◽  
Author(s):  
Y. Hasegawa ◽  
T. Egawa ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Active Region ◽  
Light Emitting Diode ◽  
Droplet Epitaxy ◽  
Si Substrate ◽  
Light Emitting

High-Power CW Operation of GaInAsP/InP Superluminescent Light-Emitting Diode with Tapered Active Region

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L678-L680 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shigeaki Sekiguchi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Active Region ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Cw Operation

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

2007 ◽  
Vol 989 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Light Emitting Diode ◽  
Optical Power ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Light Emitting ◽  
Pillar Array ◽  
Turn On ◽  
Air Interface ◽  
Order Of Magnitude ◽  
Etching Mask

AbstractA Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate

2015 ◽  
Author(s):  
Cong Wang ◽  
Bing Wang ◽  
Kenneth Eng Kian Lee ◽  
Soon Fatt Yoon ◽  
Jurgen Michel
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting

UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections

2017 ◽  
Vol 42 (21) ◽  
pp. 4533 ◽  
Author(s):  
Zi-Hui Zhang ◽  
Chunshuang Chu ◽  
Ching Hsueh Chiu ◽  
Tien Chang Lu ◽  
Luping Li ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting ◽  
Uva Light

Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EH03 ◽  
Author(s):  
Chiao Chang ◽  
Hui Li ◽  
Ssu-Hsuan Huang ◽  
Li-Chien Lin ◽  
Hung-Hsiang Cheng
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Light Emitting

Dual-color InGaN/GaN Pyramidal Micro Light-emitting Diode Selectively Grown on SiO2 Masked Si Substrate

2015 ◽  
pp. 1-1 ◽  
Author(s):  
Weijie Chen ◽  
Jiali Lin ◽  
Yinsong Chen ◽  
Xiaobiao Han ◽  
Jie Chen ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting ◽  
Dual Color

scholarly journals Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

2009 ◽  
Vol 17 (12) ◽  
pp. 10019 ◽  
Author(s):  
Szu-Lin Cheng ◽  
Jesse Lu ◽  
Gary Shambat ◽  
Hyun-Yong Yu ◽  
Krishna Saraswat ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting
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