scholarly journals Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

2009 ◽  
Vol 17 (12) ◽  
pp. 10019 ◽  
Author(s):  
Szu-Lin Cheng ◽  
Jesse Lu ◽  
Gary Shambat ◽  
Hyun-Yong Yu ◽  
Krishna Saraswat ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim
Keyword(s):  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Temperature Solution ◽  
Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

2007 ◽  
Vol 989 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Light Emitting Diode ◽  
Optical Power ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Light Emitting ◽  
Pillar Array ◽  
Turn On ◽  
Air Interface ◽  
Order Of Magnitude ◽  
Etching Mask

AbstractA Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

scholarly journals Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport

2012 ◽  
Vol 20 (14) ◽  
pp. 14921 ◽  
Author(s):  
Seongjae Cho ◽  
Byung-Gook Park ◽  
Changjae Yang ◽  
Stanley Cheung ◽  
Euijoon Yoon ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Light Emitting

(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

scholarly journals Portable Instrument for Hemoglobin Determination Using Room-Temperature Phosphorescent Carbon Dots

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 825
Author(s):  
Fabio Murru ◽  
Francisco J. Romero ◽  
Roberto Sánchez-Mudarra ◽  
Francisco J. García Ruiz ◽  
Diego P. Morales ◽  
...  
Keyword(s):  
Carbon Dots ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Electronic System ◽  
Portable Device ◽  
Light Emitting ◽  
Current Converter ◽  
Reconfigurable Platform ◽  
Luminescence Characteristics

A portable reconfigurable platform for hemoglobin determination based on inner filter quenching of room-temperature phosphorescent carbon dots (CDs) in the presence of H2O2 is described. The electronic setup consists of a light-emitting diode (LED) as the carbon dot optical exciter and a photodiode as a light-to-current converter integrated in the same instrument. The reconfigurable feature provides adaptability to use the platform as an analytical probe for CDs coming from different batches with some variations in luminescence characteristics. The variables of the reaction were optimized, such as pH, concentration of reagents, and response time; as well as the variables of the portable device, such as LED voltage, photodiode sensitivity, and adjustment of the measuring range by a reconfigurable electronic system. The portable device allowed the determination of hemoglobin with good sensitivity, with a detection limit of 6.2 nM and range up to 125 nM.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

Excitonic blue luminescence from p-LaCuOSe∕n-InGaZn5O8 light-emitting diode at room temperature

2005 ◽  
Vol 87 (21) ◽  
pp. 211107 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Blue Luminescence ◽  
Light Emitting

scholarly journals Silicon carbide light-emitting diode as a prospective room temperature source for single photons

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
F. Fuchs ◽  
V. A. Soltamov ◽  
S. Väth ◽  
P. G. Baranov ◽  
E. N. Mokhov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Single Photons ◽  
Light Emitting
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