Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes

1996 ◽  
Vol 68 (20) ◽  
pp. 2867-2869 ◽  
Author(s):  
H. C. Casey ◽  
J. Muth ◽  
S. Krishnankutty ◽  
J. M. Zavada
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Band Filling

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L8-L11 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Takashi Mukai
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes

1996 ◽  
Vol 69 (12) ◽  
pp. 1680-1682 ◽  
Author(s):  
Piotr Perlin ◽  
Marek Osiński ◽  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Jian Mu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Temperature Study

Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes

1997 ◽  
Vol 26 (3) ◽  
pp. 311-319 ◽  
Author(s):  
Petr G. Eliseev ◽  
Piotr Perlin ◽  
Julien Furioli ◽  
Philippe Sartori ◽  
Jian Mu ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting

Mechanisms of Forward Current and Reverse Leakage Current in GaN-Based Blue Light Emitting Diodes

2013 ◽  
Vol 380-384 ◽  
pp. 3035-3038 ◽  
Author(s):  
Ren Jian ◽  
Li Sha Li ◽  
Da Wei Yan ◽  
Xiao Feng Gu
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Tunneling Mechanism ◽  
Forward Current ◽  
Current Voltage ◽  
High Bias

By measuring the current-voltage (I-V) characteristics in the temperature range of 100 K to 300 K, mechanisms of the forward tunneling current and the reverse leakage current of GaN-based blue light emitting diodes are analyzed. For the forward current, both the temperature-independent current slope and an ideality factor larger than 2 are typical features of the defect-assisted tunneling mechanism. For the reverse leakage current, the linear relationship between I and (V+Vbi)1/2 indicates a hopping conduction mechanism at low bias, while the power law I-V relationship suggests that the space charge limited current dominates the reverse leakage current at high bias.

Forward tunneling current in GaN-based blue light-emitting diodes

2010 ◽  
Vol 96 (8) ◽  
pp. 083504 ◽  
Author(s):  
Dawei Yan ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Rong Zhang ◽  
Youdou Zheng
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

2001 ◽  
Vol 18 (2) ◽  
pp. 283-285 ◽  
Author(s):  
Shen Bo ◽  
Shi Hong-Tao ◽  
Zhang Rong ◽  
Chen Zhi-Zhong ◽  
Zheng You-Dou
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Double Heterostructure
Sign in / Sign up

Export Citation Format

Share Document