Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes

1996 ◽  
Vol 69 (12) ◽  
pp. 1680-1682 ◽  
Author(s):  
Piotr Perlin ◽  
Marek Osiński ◽  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Jian Mu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Temperature Study

Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer

2012 ◽  
Vol 33 (10) ◽  
pp. 104002 ◽  
Author(s):  
Panpan Li ◽  
Hongjian Li ◽  
Yiyun Zhang ◽  
Zhicong Li ◽  
Meng Liang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

2009 ◽  
Vol 31 (9) ◽  
pp. 1323-1326 ◽  
Author(s):  
Yoshikazu Terai ◽  
Takehiro Tokuno ◽  
Hideki Ichida ◽  
Yasuo Kanematsu ◽  
Yasufumi Fujiwara
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L8-L11 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Takashi Mukai
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

2002 ◽  
Vol 80 (20) ◽  
pp. 3670-3672 ◽  
Author(s):  
A. Dadgar ◽  
M. Poschenrieder ◽  
J. Bläsing ◽  
K. Fehse ◽  
A. Diez ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

2001 ◽  
Vol 18 (2) ◽  
pp. 283-285 ◽  
Author(s):  
Shen Bo ◽  
Shi Hong-Tao ◽  
Zhang Rong ◽  
Chen Zhi-Zhong ◽  
Zheng You-Dou
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Double Heterostructure
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