Forward tunneling current in GaN-based blue light-emitting diodes

2010 ◽  
Vol 96 (8) ◽  
pp. 083504 ◽  
Author(s):  
Dawei Yan ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Rong Zhang ◽  
Youdou Zheng
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting

Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes

1997 ◽  
Vol 26 (3) ◽  
pp. 311-319 ◽  
Author(s):  
Petr G. Eliseev ◽  
Piotr Perlin ◽  
Julien Furioli ◽  
Philippe Sartori ◽  
Jian Mu ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting

Mechanisms of Forward Current and Reverse Leakage Current in GaN-Based Blue Light Emitting Diodes

2013 ◽  
Vol 380-384 ◽  
pp. 3035-3038 ◽  
Author(s):  
Ren Jian ◽  
Li Sha Li ◽  
Da Wei Yan ◽  
Xiao Feng Gu
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Tunneling Mechanism ◽  
Forward Current ◽  
Current Voltage ◽  
High Bias

By measuring the current-voltage (I-V) characteristics in the temperature range of 100 K to 300 K, mechanisms of the forward tunneling current and the reverse leakage current of GaN-based blue light emitting diodes are analyzed. For the forward current, both the temperature-independent current slope and an ideality factor larger than 2 are typical features of the defect-assisted tunneling mechanism. For the reverse leakage current, the linear relationship between I and (V+Vbi)1/2 indicates a hopping conduction mechanism at low bias, while the power law I-V relationship suggests that the space charge limited current dominates the reverse leakage current at high bias.

Blue light-emitting diodes in hair regrowth: the first prospective study

2021 ◽  
Author(s):  
G. Lodi ◽  
M. Sannino ◽  
G. Cannarozzo ◽  
A. Giudice ◽  
E. Del Duca ◽  
...  
Keyword(s):  
Prospective Study ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Hair Regrowth

scholarly journals Air stable and highly efficient Bi3+-doped Cs2SnCl6 for blue light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26415-26420
Author(s):  
Yue Yao ◽  
Si-Wei Zhang ◽  
Zijian Liu ◽  
Chun-Yun Wang ◽  
Ping Liu ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Color Coordinates ◽  
Blue Led ◽  
Highly Efficient ◽  
Photoluminescence Quantum Yield ◽  
Long Life

A Bi3+-doped Cs2SnCl6 exhibits photoluminescence at around 456 nm and a photoluminescence quantum yield of 31%. The blue LED based on the Bi3+-doped Cs2SnCl6 phosphor exhibits a long life of 120 hours and a CIE color coordinates of (0.14, 0.11).

scholarly journals Device Modeling of Quantum Dot–Organic Light Emitting Diodes for High Green Color Purity

2021 ◽  
Vol 11 (6) ◽  
pp. 2828
Author(s):  
Byoung-Seong Jeong
Keyword(s):  
Quantum Dot ◽  
Emission Spectrum ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Color Purity ◽  
Wavelength Band ◽  
Light Emitting ◽  
Green Color ◽  
Organic Light

In this study, the optimal structure for obtaining high green color purity was investigated by modeling quantum dot (QD)–organic light-emitting diodes (OLED). It was found that even if the green quantum dot (G-QD) density in the G-QD layer was 30%, the full width at half maximum (FWHM) in the green wavelength band could be minimized to achieve a sharp emission spectrum, but it was difficult to completely block the blue light leakage with the G-QD layer alone. This blue light leakage problem was solved by stacking a green color filter (G-CF) layer on top of the G-QD layer. When G-CF thickness 5 μm was stacked, blue light leakage was blocked completely, and the FWHM of the emission spectrum in the green wavelength band was minimized, resulting in high green color purity. It is expected that the overall color gamut of QD-OLED can be improved by optimizing the device that shows such excellent green color purity.

Sign in / Sign up

Export Citation Format

Share Document