scholarly journals Response to ‘‘Comment on ‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’ ’’ [Appl. Phys. Lett. 68, 2453 (1996)]

1996 ◽  
Vol 68 (17) ◽  
pp. 2455-2455 ◽  
Author(s):  
G. Bahir ◽  
V. Ariel ◽  
V. Garber ◽  
D. Rosenfeld ◽  
A. Sher
Keyword(s):  
Electrical Properties ◽  
Long Wavelength ◽  
Cdte Passivation ◽  
Hgcdte Photodiodes

Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes

1994 ◽  
Vol 65 (21) ◽  
pp. 2725-2727 ◽  
Author(s):  
G. Bahir ◽  
V. Ariel ◽  
V. Garber ◽  
D. Rosenfeld ◽  
A. Sher
Keyword(s):  
Electrical Properties ◽  
Long Wavelength ◽  
Cdte Passivation ◽  
Hgcdte Photodiodes

Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

1996 ◽  
Vol 8 (5) ◽  
pp. 676-678 ◽  
Author(s):  
C.T. Lin ◽  
Y.K. Su ◽  
H.T. Huang ◽  
S.J. Chang ◽  
G.S. Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Native Oxide ◽  
Long Wavelength ◽  
Hgcdte Photodiodes

QUANTUM WELL INFRARED PHOTOCONDUCTORS IN INFRARED DETECTORS TECHNOLOGY

2002 ◽  
Vol 12 (03) ◽  
pp. 593-658 ◽  
Author(s):  
A. ROGALSKI
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Infrared Detectors ◽  
Infrared Photodetectors ◽  
Ir Detectors ◽  
High Quantum Efficiency ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
G Ratio ◽  
Hgcdte Photodiodes

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

Growth of High Quality Lwir Films by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
Electrical Performance ◽  
Cdznte Substrate ◽  
Long Wavelength ◽  
Indium Doping ◽  
Dislocation Densities ◽  
Infra Red

ABSTRACTGrowth of long wavelength infra-red mercury cadmium telluride films by liquid phase epitaxy has usually yielded films of inferior electrical properties as evidenced by Hall mobilities lower than theoretical values by factors of 5 or more at 77°K. In addition the Hall behavior over the entire temperature range did not follow classical patterns. A systematic series of investigations was conducted to improve the electrical performance of these films by four methods: i) growth of HgCdZnTe films, where a portion of the cadmium was replaced by zinc, ii) growth at temperatures > 550°C, iii) growth at a slow rate on a CdZnTe substrate following ‘Cleaning’ in the melt of the substrate surface and iv) doping the film by controlled levels of indium. The first method did not lead to any improvements in the Hall behavior. In addition, the films grown displayed varying dislocation densities. The second method led to a small but definite increase in the yield of non-anomalous or classical films (5%). The third method yielded films with classical or non-anomalous Hall behavior about 20% of the time. The last method consistently led to films with classical Hall behavior. This was accomplished with indium doping levels at 1.5× 1014/cm3. Preliminary data indicate that it will be possible to go to still lower doping levels while maintaining classical Hall behavior. The improvement in electrical properties of these epifilms can be attributed to the reduction or elimination of type inhomogeneities known to degrade Hall mobilities in films grown by liquid phase epitaxy.

Bake stability of long-wavelength infrared HgCdTe photodiodes

1995 ◽  
Vol 24 (9) ◽  
pp. 1183-1187 ◽  
Author(s):  
A. Mestechkin ◽  
D. L. Lee ◽  
B. T. Cunningham ◽  
B. D. Mac Leod
Keyword(s):  
Long Wavelength ◽  
Long Wavelength Infrared ◽  
Hgcdte Photodiodes
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